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Infineon HEXFET N-Channel MOSFET 55 V 29 A TO-220 3-Pin Enhancement Mode IRFZ34NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRFZ34NPBF |
| Width | 4.4mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
| N-channel MOSFET,IRFZ34N 26A 55V 50pcsBrand | International Rectifier |
Key Features
- Ultra-low on-resistance minimizes power loss during operation.
- Maximum power dissipation rated at 68 watts for robust performance.
- Wide operating temperature range from -55°C to 175°C ensures reliable performance.
- Designed for through-hole mounting for easy integration.
- Dynamic dv/dt rating supports fast switching applications.
- Enhancement mode transistor for improved efficiency.
- Typical gate charge of 34 nC at Vgs for precise switching control.
- Maximum gate-source voltage of ±20 V for safe operation.
Product Description
Infineon IRFZ34NPBF HEXFET N-Channel MOSFET is engineered for demanding electronic applications requiring efficient and reliable switching. With a maximum continuous drain current of 29 A and drain-source voltage rating of 55 V, it is ideal for high-performance power management in industrial and automotive sectors.
This 3-pin enhancement mode MOSFET utilizes the HEXFET technology for ultra-low on-resistance (40 mΩ) resulting in reduced power dissipation and increased energy efficiency. It supports a maximum power dissipation of 68 W and tolerates temperature extremes from -55°C up to 175°C, ensuring durability in harsh environments.
The device comes in a TO-220 package designed for through-hole mounting, facilitating easy assembly on printed circuit boards. Its dynamic dv/dt rating enables rapid switching necessary for applications such as motor speed control and power supply regulation.
Operating with a typical gate charge of 34 nC and gate-source voltage rating of ±20 V, the IRFZ34NPBF offers precise switching capabilities while safeguarding against voltage spikes and damage. Its forward voltage is 1.6 V, contributing to efficient current conduction.
Common industrial applications include power supplies, motor control systems, consumer electronics switching, and automotive electronics where high current handling and reliability are essential.
Ultra-low on-resistance reduces thermal losses enhancing device efficiency. High power dissipation capacity supports demanding applications. Wide temperature tolerance promotes long-term device stability in extreme conditions.
Through-hole TO-220 package simplifies installation and heat dissipation. Dynamic dv/dt capability ensures compatibility with fast switching circuits. Enhancement mode design promotes efficient power control. Suitable for parallel operation for increased current handling.
Robust gate-source voltage limits guard against electrical overstress.
EnvMart offers a comprehensive selection of Infineon semiconductor devices engineered for reliability and high performance in industrial, laboratory, automotive, and power electronics applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 29 A.
It has a maximum drain-source voltage rating of 55 V.
This model supports a maximum power dissipation of 68 W.
The operating temperature range for this MOSFET is from -55°C to 175°C.
The typical gate charge at Vgs for this unit is 34 nC.
It comes in a TO-220 package designed for through-hole mounting.
The maximum drain-source resistance (Rds) is 40 mΩ.
The forward voltage of this model is 1.6 V.
The dimensions of the TO-220 package are 10.54 mm in length, 4.4 mm in width, and 8.77 mm in height.
Common applications include power supplies, motor control systems, consumer electronics switching, and automotive electronics.
The maximum gate-source voltage rating is ±20 V.
This model is an N-channel MOSFET with enhancement mode design.
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