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Infineon HEXFET N-Channel MOSFET, 110A Continuous Drain Current, 55V Drain Source Voltage, Enhancement Mode IRFP064NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP064NPBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 170nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Low on-resistance of 8mΩ improves efficiency during operation.
- Maximum power dissipation capability of 200W for robust performance.
- Supports operating temperatures from -55°C up to +175°C for durability.
- Enhancement mode ensures reliable switching performance.
- Through-hole mounting in a TO-247 3-pin package simplifies integration.
- Maximum gate-source voltage range is -20V to +20V for flexible control.
- Typical gate charge of 170nC optimizes switching speed.
- Forward voltage drop of 1.3V ensures efficient conduction.
Product Description
Infineon IRFP064NPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor device tailored for efficient power management in electronics and industrial applications. Featuring a continuous drain current rating of 110A and a maximum drain-source voltage of 55V, this enhancement mode MOSFET delivers excellent switching performance in demanding environments.
Its low drain-source resistance of 8mΩ ensures minimal power losses, while the device can sustain power dissipation up to 200W, making it suitable for high power circuits. The robust thermal operation range from -55°C to +175°C allows usage in harsh industrial, automotive, and telecommunications equipment.
The component comes in a through-hole TO-247 3-pin package which facilitates straightforward mounting and integration into power supply circuits, motor controllers, and industrial power conversion systems. The maximum gate-source voltage of -20V to +20V adds versatility for various control circuit designs.
Key parameters like a typical gate charge of 170nC and a forward voltage of 1.3V support efficient switching and conduction with reduced heat generation. The MOSFET's design aligns with applications requiring high efficiency and reliable operation.
Low on-resistance of 8mΩ enhances efficiency during switching. High maximum power dissipation of 200W for rigorous use cases. Wide operating temperature range from -55°C to +175°C. Enhancement mode N-Channel for dependable switching.
3-pin TO-247 package for through-hole mounting applications. Wide gate-source voltage tolerance of ±20V allows flexible control. Typical gate charge at 170nC aids in fast switching performance. Forward voltage drop of 1.3V for efficient conduction.
This MOSFET is well suited for industrial automation, power supply design, motor control, and telecommunications infrastructure. Its reliable performance and robust ratings ensure effective power management in professional electronic and electrical engineering contexts.
Explore a wide range of semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 110A.
This MOSFET has a maximum drain-source voltage rating of 55V.
The typical gate charge for this model is 170nC.
It operates within a temperature range of -55°C to +175°C.
This unit comes in a TO-247 package type and is designed for through-hole mounting.
The forward voltage drop for this model is 1.3V.
The maximum power dissipation capability is 200W.
The maximum gate-source voltage range is from -20V to +20V.
The maximum drain-source resistance for this model is 8mΩ.
The TO-247 package has 3 pins.
This model utilizes an N-channel configuration.
The country of origin for this model is India.
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