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Vishay Optocoupler Through Hole 6-Pin DIP H11D3
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Vishay |
| Model | H11D3 |
| Packaging | Tape & Reel |
| Mount Type | Through Hole |
| Series | H11D |
| Maximum Operating Temperature | 100°C |
| Package Type | DIP |
| Minimum Operating Temperature | -55°C |
| Maximum input current | 60mA |
| Maximum Forward Voltage | 1.5V |
| Number of Pins | 6 |
| Minimum Current Transfer Ratio | 20% |
Key Features
- This optocoupler features a GaAs infrared emitting diode emitter paired with a planar silicon phototransistor detector.
- It supports a maximum forward voltage of 1.5V and maximum input current of 60mA.
- The device offers low coupling capacitance and high common mode transient immunity enhancing signal integrity.
- Operational temperature ranges from -55°C minimum to 100°C maximum.
- It is packed in tape & reel format suitable for automated assembly.
- The package type is DIP with 6 pins suitable for through hole mounting.
- Compliant with standards cUL1577, UL1577, and DIN EN 60747-5-5 (VDE 0884-5).
- The optocoupler is designed for reliable electrical isolation and signal coupling in industrial and electronic applications.
Product Description
Vishay H11D3 optocoupler is a high-performance device designed for electrical signal transmission with robust isolation. It features a gallium arsenide (GaAs) infrared light emitting diode as the emitter optically coupled to a silicon planar phototransistor detector in a compact 6-pin DIP through hole package. The device supports a maximum forward voltage of 1.5 volts and maximum input current of 60 milliamps, optimizing power efficiency and signal reliability for control and isolation circuits.
The H11D3 offers low coupling capacitance and high common mode transient immunity ensuring minimal interference and accurate signal transfer even in noisy industrial environments. Operating temperature range from -55°C to 100°C makes it highly suitable for extreme temperature conditions encountered in automotive, industrial control, and instrumentation applications.
Packaged in tape and reel format, this optocoupler facilitates automated PCB assembly processes. Compliance with international standards such as cUL1577, UL1577, and DIN EN 60747-5-5 ensures quality assurance and interoperability in global electronics manufacturing.
The device provides excellent electrical isolation of 5000Vrms between input and output, protecting sensitive electronics from high voltage surges and noise. Its through hole DIP package with 6 pins provides reliable mechanical stability and ease of mounting in various electronic designs.
Applications include industrial automation, power supply protection, data transmission, microprocessor system isolation, and other electronic control systems requiring safe and effective signal isolation.
This optocoupler features a GaAs infrared emitting diode emitter paired with a planar silicon phototransistor detector. Maximum forward voltage of 1.5 volts and input current up to 60 milliamps. Designed for low coupling capacitance and high common mode transient immunity.
Wide operating temperature range supports harsh environments. 6-pin DIP package enables effective through hole mounting. Tape & reel packaging suitable for automated production lines. Certified to cUL1577, UL1577, and DIN EN 60747-5-5 standards.
Explore more Vishay Optocouplers and electronic components with EnvMart for industrial, laboratory, automation, and manufacturing applications.
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Frequently Asked Questions
The maximum forward voltage of this optocoupler is 1.5 volts.
The maximum input current for the H11D3 is 60 milliamps.
This model operates within a temperature range of -55°C to 100°C.
The H11D3 features a 6-pin configuration.
It is packaged in tape and reel format, suitable for automated assembly.
This optocoupler supports through hole mounting.
The device complies with cUL1577, UL1577, and DIN EN 60747-5-5 standards.
The minimum current transfer ratio for the H11D3 is 20%.
It is suitable for applications such as industrial automation, power supply protection, and data transmission.
The device provides electrical isolation of 5000Vrms between input and output.
It features a GaAs infrared emitting diode as the emitter and a silicon phototransistor as the detector.
The H11D3 is manufactured in Malaysia.
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