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Infineon HEXFET N-Channel MOSFET 110A 55V Enhancement Mode 3-Pin TO-220 IRF3205PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF3205PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 146nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRF3205 98A 55VBrand | International Rectifier |
Key Features
- This MOSFET features an enhancement mode design for stable operation.
- Capable of operating at high temperatures up to 175°C.
- Low maximum drain-source resistance of 8 mΩ ensures efficient switching.
- Supports through-hole mounting for easy integration.
- Ideal for power supply conversion, motor control, and battery management systems.
- Equipped with excellent avalanche rating for enhanced durability.
- Provides fast switching characteristics to optimize performance.
- Compact dimensions enhance suitability for various industrial applications.
Product Description
Infineon IRF3205PBF HEXFET N-Channel MOSFET is a high-performance power semiconductor designed for industrial and electronic applications requiring efficient power management. It supports a maximum continuous drain current of 110A and a maximum drain-source voltage of 55V, making it suitable for demanding power switching tasks.
The device employs enhancement mode channel operation and comes housed in a TO-220 package with 3 pins, facilitating effective thermal management and reliable through-hole mounting.
Operating temperatures range from -55°C to 175°C, accommodating harsh operating environments. The MOSFET features a low on-resistance (8 mΩ) and a typical gate charge of 146 nC at Vgs, enabling fast switching and reduced power loss.
Thermal characteristics include a junction-to-case thermal resistance of 0.75°C/W, which can be further improved by using a heatsink to maintain optimal device temperature during operation.
This device is widely used in power conversion circuits, motor control in industrial and commercial electronics, battery management systems, and high-frequency switching circuits for consumer electronics.
This MOSFET provides excellent avalanche capability and stable performance in enhancement mode. The TO-220 packaging supports effective heat dissipation with proper thermal management. Its compact dimensions (Height: 8.77mm, Length: 10.54mm, Width: 4.69mm) support space-constrained designs.
Designed for through-hole mounting, enabling robust mechanical and electrical connections. Suitable for applications requiring high current and voltage handling capabilities. Explore the comprehensive range of Infineon semiconductor devices on EnvMart for advanced electronics and industrial solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 110A.
This MOSFET supports a maximum drain-source voltage of 55V.
The operating temperature range is from -55°C to 175°C, accommodating harsh environments.
It features a low maximum drain-source resistance of 8 mΩ, ensuring efficient switching.
This model is designed for through-hole mounting, which facilitates easy integration.
The dimensions are 8.77mm in height, 10.54mm in length, and 4.69mm in width.
The typical gate charge at Vgs is 146 nC.
It comes in a TO-220 package type, which supports effective thermal management.
The maximum power dissipation is rated at 200W.
This MOSFET is suitable for power supply conversion, motor control, and battery management systems.
It is equipped with excellent avalanche capability for enhanced durability.
The maximum gate-source voltage is -20V to +20V.
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