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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.67mm |
| Model | IRFZ44NPBF |
| Width | 4.4mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 49A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 17.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 94W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRFZ44N 41A 55VBrand | International Rectifier |
Infineon IRFZ44NPBF HEXFET N-Channel MOSFET is engineered for high-power electronic applications, including industrial automation, motor control systems, and renewable energy solutions such as solar inverters. It features a 3-pin TO-220 package designed for easy integration into PCB layouts with through-hole mounting.
This device supports a maximum continuous drain current of 49 amperes at 25°C, decreasing to 35 amperes at 100°C, allowing safe operation in diverse thermal environments. Its low drain-source resistance of 17.5 milliohms significantly reduces conduction losses, improving overall power efficiency in circuits.
The enhancement mode channel combined with fast switching speeds makes the IRFZ44NPBF suitable for DC-DC converters and motor drives that require responsive and efficient power management. It can handle repetitive avalanche conditions with an avalanche current rating of 25 amperes and an avalanche energy of 9.4 millijoules, adding to its durability in rugged applications.
Product dimensions include a length of 10.67 mm, width of 4.4 mm, and height of 8.77 mm, making it compact yet powerful for various industrial, laboratory, and HVAC electrical engineering uses.
Maximum continuous drain current: 49A for high-current applications. Low on-resistance of 17.5mΩ reduces power losses. Operating temperature range from -55°C to 175°C suits demanding environments. Enhancement mode channel ensures efficient switching.
TO-220 3-pin package allows versatile PCB integration. Maximum power dissipation of 94W supports heavy loads. Typical gate charge of 63nC optimizes gate control. Avalanche rugged design enhances reliability under transient conditions.
This MOSFET is ideal for industries requiring reliable high current switching such as automotive systems, renewable energy infrastructure, and general electronic power controls. Its robust construction, efficient operation, and compatibility with standard PCB designs make it a preferred choice for engineers and designers.
Explore more Infineon semiconductor components and power MOSFETs on EnvMart for advanced electronic solutions to meet your project requirements.
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