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Infineon HEXFET N-Channel MOSFET, 49 A, 55 V Enhancement Mode, 3-Pin TO-220 Package IRFZ44NPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 8.77mm
Length 10.67mm
Model IRFZ44NPBF
Width 4.4mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 49A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 17.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 94W
Typical Gate Charge Qg @ Vgs 63nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V
N-channel MOSFET,IRFZ44N 41A 55VBrand International Rectifier

Key Features

  • Maximum continuous drain current of 49 amperes for demanding circuits.
  • Maximum drain-source voltage rating of 55 volts ensuring robust operation.
  • Low on-resistance of 17.5 milliohms to minimize power losses.
  • Enhancement mode channel for precise control and fast switching.
  • Three-pin TO-220 package suitable for through-hole mounting.
  • Maximum power dissipation rated at 94 watts.
  • Operating temperature range from -55°C up to 175°C for wide environmental tolerance.
  • Designed to withstand repetitive avalanche conditions with avalanche current of 25A and energy of 9.4mJ.

Product Description

Infineon IRFZ44NPBF HEXFET N-Channel MOSFET is engineered for high-power electronic applications, including industrial automation, motor control systems, and renewable energy solutions such as solar inverters. It features a 3-pin TO-220 package designed for easy integration into PCB layouts with through-hole mounting.

This device supports a maximum continuous drain current of 49 amperes at 25°C, decreasing to 35 amperes at 100°C, allowing safe operation in diverse thermal environments. Its low drain-source resistance of 17.5 milliohms significantly reduces conduction losses, improving overall power efficiency in circuits.

The enhancement mode channel combined with fast switching speeds makes the IRFZ44NPBF suitable for DC-DC converters and motor drives that require responsive and efficient power management. It can handle repetitive avalanche conditions with an avalanche current rating of 25 amperes and an avalanche energy of 9.4 millijoules, adding to its durability in rugged applications.

Product dimensions include a length of 10.67 mm, width of 4.4 mm, and height of 8.77 mm, making it compact yet powerful for various industrial, laboratory, and HVAC electrical engineering uses.

Maximum continuous drain current: 49A for high-current applications. Low on-resistance of 17.5mΩ reduces power losses. Operating temperature range from -55°C to 175°C suits demanding environments. Enhancement mode channel ensures efficient switching.

TO-220 3-pin package allows versatile PCB integration. Maximum power dissipation of 94W supports heavy loads. Typical gate charge of 63nC optimizes gate control. Avalanche rugged design enhances reliability under transient conditions.

This MOSFET is ideal for industries requiring reliable high current switching such as automotive systems, renewable energy infrastructure, and general electronic power controls. Its robust construction, efficient operation, and compatibility with standard PCB designs make it a preferred choice for engineers and designers.

Explore more Infineon semiconductor components and power MOSFETs on EnvMart for advanced electronic solutions to meet your project requirements.

Infineon HEXFET N-Channel MOSFET, 49 A, 55 V Enhancement Mode, 3-Pin TO-220 Package IRFZ44NPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 49 amperes at 25°C, decreasing to 35 amperes at 100°C.

This MOSFET has a maximum drain-source voltage rating of 55 volts, ensuring robust operation in various applications.

It features a low on-resistance of 17.5 milliohms, which helps minimize power losses during operation.

The operating temperature range for this unit is from -55°C to 175°C, making it suitable for demanding environments.

This model comes in a 3-pin TO-220 package, designed for through-hole mounting on PCBs.

The maximum power dissipation for this MOSFET is rated at 94 watts, allowing it to support heavy loads.

The typical gate charge is 63 nanocoulombs, which optimizes gate control for efficient operation.

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of 25 amperes and an energy rating of 9.4 millijoules.

This model features an N-channel configuration, which is suitable for various high-power applications.

It is engineered for high-power electronic applications, including industrial automation, motor control systems, and renewable energy solutions like solar inverters.

The dimensions of this model are 10.67 mm in length, 4.4 mm in width, and 8.77 mm in height.

The maximum gate-source voltage for this model is -20V to +20V, which facilitates its operation in various circuit configurations.

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