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Infineon OptiMOS N-Channel MOSFET 17A 55V Enhancement Mode 3-Pin TO-252 IPD14N06S280ATMA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | IPD14N06S280ATMA2 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High performance OptiMOS series for efficient power management.
- Enhancement mode device suited for switching applications.
- Surface mount TO-252 package with 3 pins for compact PCB integration.
- Maximum continuous drain current of 17 A for substantial load handling.
- Low drain-source resistance of 80 milliohms to minimize conduction losses.
- Capable of operating up to 175°C for high temperature environments.
- AEC-Q101 qualified for automotive applications ensuring robustness.
- Typical gate charge of 8 nanocoulombs allowing fast switching.
Product Description
Infineon IPD14N06S280ATMA2 is a high-performance N-Channel MOSFET from the OptiMOS series designed for advanced power management applications. It features a maximum continuous drain current of 17 A and a maximum drain-source voltage of 55 V within a robust 3-pin TO-252 surface mount package, making it suitable for compact electronic designs.
This enhancement mode MOSFET offers a low drain-source resistance of 80 milliohms to reduce conduction losses, improving overall efficiency in switching circuits. It maintains operational stability over a wide temperature range from -55°C to 175°C, making it ideal for automotive and industrial environments.
Certified to the Automotive AEC-Q101 standard and 100% avalanche tested, this MOSFET guarantees high reliability and quality for demanding conditions. Its typical gate charge of 8 nC enables fast switching cycles, essential for modern power electronics.
Its power dissipation rating of 30 W allows the device to handle substantial power loads, suitable for various electronic manufacturing, automotive electronics, and power supply applications.
The compact dimensions of 6.5 mm length, 6.22 mm width, and 2.3 mm height enable versatile placement on PCBs with restricted space. Designed for surface mounting, it integrates well with automated assembly lines.
High performance OptiMOS series ensures superior power efficiency. Robust surface mount TO-252 package for space-saving designs. Wide temperature and voltage range for versatile industrial use. Automotive qualified for enhanced reliability in vehicle systems.
Ideal for industrial, automotive, and power management applications. Explore a broad range of Infineon semiconductor products and other MOSFET variants suitable for your electronic component needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
The maximum drain-source voltage is 55 V.
The typical gate charge is 8 nanocoulombs (nC).
This device comes in a TO-252 package with 3 pins.
The dimensions are 6.5 mm in length, 6.22 mm in width, and 2.3 mm in height.
The maximum operating temperature is 175°C.
Yes, it is AEC-Q101 qualified for automotive applications.
The drain-source resistance is 80 milliohms (mΩ).
The power dissipation rating is 30 W.
The minimum operating temperature is -55°C.
This model supports surface mounting.
The forward voltage is 1.3 V.
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