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Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement Mode, 3-Pin TO-252 Package SPD08P06PGBTMA1

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Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement Mode, 3-Pin TO-252 Package SPD08P06PGBTMA1

Name: Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement Mode, 3-Pin TO-252 Package SPD08P06PGBTMA1
Brand: Infineon
SKU: 332705
Price: 0.57 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.3mm
Length	6.5mm
Model	SPD08P06PGBTMA1
Width	6.22mm
Mount Type	Surface
Series	SIPMOS
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	8.8A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	300mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	42W
Typical Gate Charge Qg @ Vgs	10nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.55V
P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1Brand	Infineon

Key Features

Supports a maximum continuous drain current of 8.8 A for demanding applications.
Operates at a maximum drain-source voltage of 60 V ensuring reliable performance.
Enhancement mode channel provides high efficiency switching characteristics.
Low Rds(on) resistance minimizes energy losses during operation.
Utilizes a TO-252 surface mount package with 3 pins for compact PCB integration.
Maximum power dissipation of 42 W allows robust thermal handling.
Wide operating temperature range from -55°C to 175°C ensures performance in harsh environments.
Compliant with AEC-Q101 automotive standard for high reliability in vehicle electronics.

Product Description

Infineon SPD08P06PGBTMA1 is a SIPMOS Type P-Channel MOSFET featuring a maximum continuous drain current of 8.8 A and a maximum drain-source voltage of 60 V in an enhancement mode configuration. Housed in a 3-pin TO-252 surface-mount package, it delivers efficient switching performance suitable for various industrial and automotive applications.

This MOSFET is engineered to provide low on-state resistance (Rds(on) of 300 mΩ), thereby minimizing energy loss and enhancing device efficiency. Its capability to dissipate up to 42 W of power and operate reliably at temperatures up to 175°C makes it ideal for applications requiring robust thermal management.

The device is compliant with the AEC-Q101 automotive standard, underscoring its suitability for automotive electronic controls requiring high reliability and durability. The MOSFET's typical gate charge of 10 nC allows for rapid switching, essential for power management and inverter systems.

Ideal applications include automotive electronic controllers, power management systems in industrial equipment, battery management in electric vehicles, and renewable energy inverters. The P-channel configuration facilitates high-side switching operations, providing convenient integration in complex circuit designs.

Supports maximum continuous drain current of 8.8 A for demanding electronic applications. Ensures operation up to 60 V drain-source voltage with enhancement mode functionality. Provides low on-resistance to improve energy efficiency and reduce heat generation.

Utilizes compact TO-252 package for surface mount technology. Capable of dissipating 42 W power safely at elevated temperatures. Operates in a wide temperature range from -55°C to 175°C for robust reliability. Meets the AEC-Q101 automotive quality standard for safety and durability.

Features fast switching gate charge characteristics for efficient circuit control. Suitable for automotive, industrial, renewable energy, and consumer electronics systems. Supports integration in complementary MOSFET configurations for advanced applications.

Explore more Infineon semiconductor products and power MOSFETs on EnvMart for reliable sourcing of high-quality electronic components.

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Frequently Asked Questions

The maximum continuous drain current for this model is 8.8 A, making it suitable for demanding electronic applications.

It operates at a maximum drain-source voltage of 60 V, ensuring reliable performance in various applications.

The on-state resistance (Rds(on)) is 300 mΩ, which helps minimize energy losses during operation.

This MOSFET is housed in a TO-252 surface mount package with 3 pins, facilitating compact PCB integration.

It has a maximum power dissipation capability of 42 W, allowing for robust thermal handling.

The operating temperature range is from -55°C to 175°C, ensuring performance in harsh environments.

Yes, it is compliant with the AEC-Q101 automotive standard, indicating high reliability for vehicle electronics.

The typical gate charge (Qg) is 10 nC, which allows for rapid switching essential for power management applications.

It is suitable for automotive electronic controllers, power management systems, battery management in electric vehicles, and renewable energy inverters.

This model features a P-Channel configuration, which is beneficial for high-side switching operations in circuit designs.