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Toshiba Single N-Channel JFET, SOT-346, 10 V, 0.3 to 0.75 mA, 3-Pin 2SK208-R(TE85L,F)

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Toshiba Single N-Channel JFET, SOT-346, 10 V, 0.3 to 0.75 mA, 3-Pin 2SK208-R(TE85L,F)

Name: Toshiba Single N-Channel JFET, SOT-346, 10 V, 0.3 to 0.75 mA, 3-Pin 2SK208-R(TE85L,F)
Brand: Toshiba
SKU: 324547
Price: 0.38 USD
Availability: InStock

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Category Discrete Semiconductors Brand Toshiba Condition New

Specifications

Country of Origin	India
Brand	Toshiba
Height	1.1mm
Length	2.9mm
Model	2SK208-R(TE85L,F)
Width	1.5mm
Mount Type	Surface
Configuration	Single
Maximum Operating Temperature	125°C
Package Type	SOT-346
Sub Type	JFET
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Drain Source Voltage Vds	10V
Maximum Drain Source Resistance Rds	100kΩ
Maximum Power Dissipation Pd	100mW
Maximum Gate Source Voltage Vgs	-30V
Drain Source Current Ids	0.3 to 0.75 mA

Key Features

Supports drain source current ranging from 0.3 to 0.75 mA for low power applications.
Maximum power dissipation of 100 mW ensures efficiency in semiconductor circuits.
Designed for surface mount application with a small form factor of 2.9 mm length, 1.5 mm width, and 1.1 mm height.
Operates safely within a temperature range of -55°C to 125°C for reliable performance.
Features a maximum drain source resistance of 100 kΩ and a gate source voltage tolerance of -30 V.
Suitable for electronic component applications requiring a single N-channel JFET transistor configuration.
Compact pin count of 3 pins facilitates easy integration in electronic designs.

Product Description

Toshiba 2SK208-R(TE85L,F) is a Single N-Channel JFET transistor designed for semiconductor electronic applications requiring low power and compact size. This transistor features a surface mount SOT-346 package that measures 2.9 mm in length, 1.5 mm in width, and 1.1 mm in height, making it ideal for space-constrained circuit boards.

The device handles a maximum drain source voltage of 10 V and a drain source current ranging from 0.3 to 0.75 mA, suitable for sensitive signal amplification and switching tasks. It tolerates a maximum power dissipation of 100 mW, ensuring efficient energy use with minimal heat generation.

Designed for operation over extended temperature ranges from -55°C to 125°C, it delivers reliable performance in both extreme cold and high-temperature industrial environments. The transistor's maximum drain source resistance is rated at 100 kΩ, and it safely tolerates gate source voltages of up to -30 V.

This three-pin configuration enables straightforward incorporation into various electronic assemblies, supporting electronic components applications across industrial, laboratory, and commercial sectors where N-channel JFETs are required.

Supports drain source current ranging from 0.3 to 0.75 mA for low power applications. Maximum power dissipation of 100 mW ensures efficiency in semiconductor circuits. Small form factor with length 2.9 mm, width 1.5 mm, and height 1.1 mm in SOT-346 package.

Wide operating temperature range from -55°C to 125°C for durability. Maximum drain source resistance of 100 kΩ and gate source voltage tolerance of -30 V. Three-pin surface mount design for ease of use in circuit layouts.

Perfect for electronic component manufacturers, semiconductor design engineers, and maintenance in industrial electronics requiring reliable JFET transistors. Explore more Toshiba semiconductors and similar components on EnvMart for efficient procurement and design.

Explore more products in our Discrete Semiconductors category.