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Infineon N-Channel Power MOSFET, 400 A Continuous Drain Current, 800 V Maximum Drain Source Voltage, 81 W IPT026N10N5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPT026N10N5ATMA1
Mount Type Surface
Series IPT
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 400A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 1.2mΩ
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Offers low on-resistance of 1.2 milliohms ensuring efficient current flow.
  • Equipped with 8-pin TO-263 surface mount package for compact PCB integration.
  • Maximum power dissipation of 81 watts supports high load conditions.
  • Operates reliably in extreme temperatures from -55°C to 175°C.
  • Features a maximum gate-source voltage rating of 20 volts for precise switching control.
  • Typical gate charge is 80 nanocoulombs facilitating high switching speed.
  • Forward voltage drop is only 1 volt, reducing power loss.
  • Complies with RoHS standards and AEC-Q101 automotive certification for quality assurance.

Product Description

Infineon IPT026N10N5ATMA1 is an advanced N-channel power MOSFET optimized for high switching frequency applications in industrial and automotive sectors. Built in an 8-pin TO-263 surface mount package, it delivers superior thermal performance and a 60% reduction in space compared to traditional packages.

With a maximum continuous drain current of 400 amperes and a maximum drain-source voltage of 800 volts, this MOSFET is suited for demanding power electronic circuits requiring efficient conduction and minimal losses. The device’s low on-resistance rating of 1.2 milliohms contributes to outstanding performance in switching and synchronous rectification applications.

The typical gate charge of 80 nanocoulombs and a maximum gate-source voltage of 20 volts enable fast switching speeds while maintaining device robustness. Forward voltage of 1 volt ensures low conduction losses, enhancing efficiency in power management systems.

Rated for thermal operation between -55 and 175 degrees Celsius, this component ensures reliability in harsh environments. Compliance with RoHS directives and automotive grade AEC-Q101 standard underscores its suitability for automotive electronics implementations.

Its surface mount package and superior electrical parameters make it ideal for industrial, automotive, power supply, and high-frequency switching applications requiring compact design and excellent EMI behavior.

Offers low on-resistance of 1.2 milliohms ensuring efficient current flow. Equipped with 8-pin TO-263 surface mount package for compact PCB integration. Maximum power dissipation of 81 watts supports high load conditions.

Operates reliably in extreme temperatures from -55°C to 175°C. Features a maximum gate-source voltage rating of 20 volts for precise switching control. Typical gate charge is 80 nanocoulombs facilitating high switching speed.

Forward voltage drop is only 1 volt, reducing power loss. Complies with RoHS standards and AEC-Q101 automotive certification for quality assurance. Explore Infineon power MOSFETs at EnvMart for robust, efficient power conversion and control solutions suitable for cutting-edge industrial and automotive electronic designs.

Infineon N-Channel Power MOSFET, 400 A Continuous Drain Current, 800 V Maximum Drain Source Voltage, 81 W IPT026N10N5ATMA1
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Frequently Asked Questions

The maximum continuous drain current of the Infineon IPT026N10N5ATMA1 is 400 amperes.

This model has a maximum drain-source voltage rating of 800 volts.

It features a low on-resistance of 1.2 milliohms, which ensures efficient current flow.

The typical gate charge is 80 nanocoulombs, facilitating high switching speeds.

The maximum gate-source voltage rating is 20 volts, allowing for precise switching control.

It operates reliably in extreme temperatures ranging from -55°C to 175°C.

The Infineon IPT026N10N5ATMA1 is equipped with an 8-pin TO-263 surface mount package.

This model supports a maximum power dissipation of 81 watts, suitable for high load conditions.

It complies with the AEC-Q101 automotive standard, ensuring quality assurance for automotive applications.

This unit is ideal for industrial, automotive, power supply, and high-frequency switching applications.

Yes, it complies with RoHS standards, ensuring environmental safety.

The forward voltage drop is only 1 volt, which helps to reduce power loss.

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