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Nexperia P-Channel MOSFET, 30.6 A Maximum Continuous Drain Current, 12 V Drain Source Voltage, 8-Pin MLPAK33 PXP3R7-12QUJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP3R7-12QUJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 30.6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Utilizes trench MOSFET technology for enhanced performance.
- Features a low threshold voltage suitable for high-side load switching.
- Supports battery management and DC-to-DC conversion applications.
- Maximum power dissipation of 81 W ensures robust operation under load.
- Operates within a wide temperature range from -55°C to 175°C.
- Maximum gate-source voltage of 20 V provides reliable control.
- Surface mount package (MLPAK33) allows compact assembly in electronic circuits.
- Designed for switching circuit applications in industrial and commercial electronics.
Product Description
The Nexperia PXP3R7-12QUJ is a high-performance P-channel MOSFET designed for demanding electronic applications requiring reliable switching and load management. Packaged in an 8-pin MLPAK33 surface mount device, this enhancement mode FET utilizes advanced trench MOSFET technology to provide low threshold voltage and excellent conduction characteristics.
Its maximum continuous drain current rating of 30.6 A combined with a drain-source voltage limit of 12 V makes it ideal for high-side load switch applications, battery management systems, and DC-to-DC conversion circuits. The device supports a maximum power dissipation of 81 W, enabling it to handle substantial power loads in various industrial, laboratory, and commercial electronics systems.
The MOSFET operates efficiently across a broad temperature spectrum from -55°C to 175°C, accommodating a wide range of environmental conditions. Its maximum gate-source voltage rating of 20 V ensures safe operation and compatibility with standard drive voltages in control circuits.
The compact MLPAK33 package facilitates easy integration on PCBs where space is limited, making it suitable for modern electronic device assembly. This MOSFET’s specifications make it a versatile component for power management in industrial, automotive, and consumer electronics sectors.
Utilizes trench MOSFET technology providing low threshold voltage and efficient operation. Designed for use in high-side load switching, battery management, and DC-to-DC converters. Surface mount 8-pin MLPAK33 package supports compact electronic designs.
High maximum power dissipation of 81 W enables use in demanding power applications. Wide operating temperature range from -55°C to 175°C ensures reliability in varied environments. Maximum gate-source voltage of 20 V for robust device control.
This Nexperia MOSFET is well-suited for industrial, laboratory, and commercial electronic device applications requiring efficient and reliable power switching. Explore more components in the MOSFET category at EnvMart for diverse electronic system projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30.6 A.
It can handle a maximum drain-source voltage of 12 V.
The maximum power dissipation is 81 W, allowing it to manage substantial power loads.
This unit operates within a wide temperature range from -55°C to 175°C.
It is packaged in an 8-pin MLPAK33 surface mount package.
The maximum gate-source voltage is rated at 20 V.
This model is a P-channel MOSFET, designed for enhancement mode operation.
The maximum drain-source resistance is 13.6 mΩ.
It is suitable for high-side load switching, battery management systems, and DC-to-DC conversion applications.
This MOSFET has a pin count of 8.
It utilizes trench MOSFET technology for enhanced performance and low threshold voltage.
The country of origin for this model is India.
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