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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA029N06NXKSA1 |
| Mount Type | Surface |
| Series | IPA |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 84A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Channel Mode | P |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon IPA029N06NXKSA1 is a high-performance N-Channel Power MOSFET housed in a TO-220 3-pin package. It delivers a maximum continuous drain current of 84 amperes and a drain-source voltage rating of 40 volts, suitable for demanding power electronics applications.
This MOSFET features a very low maximum drain-source resistance (Rds(on)) of 2.9 milliohms, which enhances system efficiency by minimizing conduction losses. It supports a substantial power dissipation of up to 81 watts, allowing it to handle higher loads effectively.
The device operates reliably across a broad temperature range from -55°C to 175°C, making it suitable for industrial environments requiring durable components. Its typical gate charge of 80 nanocoulombs facilitates fast switching capabilities essential in high-frequency power conversion.
The forward voltage drop is rated at 1.2 volts, contributing to reduced power loss during switching. The maximum gate-source voltage of 20 volts ensures robust gate control and protection against overvoltage conditions. The TO-220 package allows through-hole mounting for ease of installation.
Infineon's IPA029N06NXKSA1 design complies with RoHS environmental standards, affirming its suitability for eco-conscious manufacturing processes.
This MOSFET is widely employed in industrial applications including motor control systems, solar micro-inverters, and fast switching DC-DC converters, where performance and reliability are critical.
Explore more products in the MOSFET category on EnvMart for a comprehensive range of high-quality semiconductor components. Equipped with a low 2.9 milliohm maximum drain-source resistance for efficient conduction. Supports a maximum power dissipation of 81 watts for reliable performance under load.
Operates within a wide temperature range from -55°C to 175°C suitable for harsh environments. Features typical gate charge of 80 nanocoulombs enabling fast switching in power applications. 3-pin surface mount package ensures easy integration with standard PCB layouts.
Forward voltage drop of 1.2 volts reduces power losses during operation. Maximum gate-source voltage rating of 20 volts for safe gate drive control. Conforms to RoHS standards ensuring compliance with environmental regulations.
Ideal for motor control, solar micro-inverter, and fast switching DC-DC converter industrial applications.
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