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Infineon IPA N-Channel MOSFET, 84A Continuous Drain Current, 40V Drain Source Voltage, 3-Pin TO-220 IPA80R1K2P7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPA80R1K2P7XKSA1
Mount Type Surface
Series IPA
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 84A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 2.9mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Supports high power dissipation of 81W for robust applications.
  • Built with low drain source resistance of 2.9 milliohms for efficient operation.
  • Operates over a wide temperature range from -55°C to 175°C.
  • Typical gate charge of 80nC allows fast switching performance.
  • Rated maximum gate-source voltage is 20V ensuring device protection.
  • Designed with forward voltage drop of 1.2V for reduced power losses.
  • RoHS compliant, meeting environmental safety standards.
  • Optimized for surface mount usage in industrial and power electronics.

Product Description

Infineon IPA80R1K2P7XKSA1 is a high-performance N-channel MOSFET designed for power electronics demanding high current and low voltage operation. Featuring a maximum continuous drain current rating of 84A and a maximum drain-source voltage of 40V, this device is housed in a TO-220 package with 3 pins, facilitating effective heat dissipation and ease of mounting.

Its low maximum drain-source resistance of 2.9 milliohms enhances efficiency by minimizing conduction losses. The MOSFET operates reliably across an extensive temperature range, from -55°C minimum operating temperature to a maximum of 175°C, making it suitable for demanding industrial environments.

The typical gate charge of 80 nanocoulombs allows for fast switching speeds, enabling its use in high-frequency power applications such as flyback converters, adapters, LED drivers, and switched-mode power supplies (SMPS). The device has a rated maximum gate-source voltage of 20V and a forward voltage drop of 1.2V, balancing protection and efficiency.

Manufactured to RoHS compliance standards, this MOSFET ensures environmentally friendly operation without compromising performance. Its surface mount configuration and 3-pin TO-220 packaging allow for versatile mounting options in power management systems.

Supports high power dissipation of 81W for robust applications. Low on-resistance reduces energy loss and heat generation. Wide operating temperature range ensures durability in harsh industrial settings. Efficient gate charge characteristics optimize switching performance.

RoHS compliant for environmental safety and regulatory compliance. Ideal for applications including adapters, chargers, LED drivers, audio SMPS, auxiliary power, and industrial power systems. Surface mount design for easy integration into circuit boards.

Standard TO-220 package ensures compatibility with common heat sinks and mounting hardware.

This product is suitable for industrial, manufacturing, electrical equipment, and power electronics applications requiring reliable high-current switching components. Separate packaging units allow for bulk ordering and inventory management.

Explore more high-quality semiconductors including MOSFETs at EnvMart for robust electronic component solutions.

Infineon IPA N-Channel MOSFET, 84A Continuous Drain Current, 40V Drain Source Voltage, 3-Pin TO-220 IPA80R1K2P7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon IPA80R1K2P7XKSA1 is 84A.

This model has a maximum drain-source voltage rating of 40V.

It supports a maximum power dissipation of 81W, making it suitable for robust applications.

The MOSFET is housed in a TO-220 package type, which facilitates effective heat dissipation.

It operates over a wide temperature range from -55°C to 175°C.

The typical gate charge is 80 nanocoulombs, allowing for fast switching performance.

The rated maximum gate-source voltage is 20V, ensuring device protection.

It has a forward voltage drop of 1.2V, which helps reduce power losses during operation.

The maximum drain-source resistance is 2.9 milliohms, enhancing operational efficiency.

Yes, the device is RoHS compliant, meeting environmental safety standards.

This model is designed for surface mounting, allowing for easy integration into circuit boards.

It is suitable for applications including adapters, chargers, LED drivers, and switched-mode power supplies (SMPS).

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