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Nexperia Dual N-Channel MOSFET 98A 40V 8-Pin LFPAK56D BUK7V4R2-40HX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BUK7V4R2-40HX |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK56D |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 98A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4.2mΩ |
| Maximum Power Dissipation Pd | 85W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Designed with Trench 9 Trench MOS technology for high efficiency.
- Half-bridge configuration reduces PCB layout complexity.
- Optimized package design improves thermal resistance and system performance.
- High power dissipation capacity of 85W for demanding applications.
- Wide operating temperature range from -55°C to 175°C.
- Low maximum drain-source resistance of 4.2 mΩ for reduced power loss.
- Maximum gate-source voltage rating of 20V ensures reliable switching.
- Qualified AEC-Q101 grade technology, suitable for automotive use.
Product Description
The Nexperia BUK7V4R2-40HX is a dual N-channel MOSFET designed using advanced Trench 9 Trench MOS technology. It features a compact 8-pin LFPAK56D surface mount package configured in a half-bridge layout, ideal for power management applications requiring efficient switching and high reliability.
This MOSFET supports a maximum continuous drain current of 98 amperes and can withstand a maximum drain-source voltage of 40 volts. With a low maximum drain-source resistance of 4.2 milliohms, the device ensures minimal conduction losses and improved efficiency.
It can dissipate up to 85 watts of power and operate reliably within a temperature range from -55°C to 175°C, making it suitable for demanding industrial, automotive, and power electronics environments. The maximum gate-source voltage of 20V allows for robust gate control signals.
Featuring advanced AEC-Q101 grade silicon technology, the BUK7V4R2-40HX is qualified for automotive applications. The half-bridge configuration helps reduce PCB complexity and system size while enhancing thermal management through an optimized package that delivers superior thermal resistance and lower parasitic inductance.
This MOSFET is frequently used in 3-phase motor drives, power converters, and automotive powertrain systems. Its dual-element chip design supports efficient half-bridge operation with improved performance and reliability.
Designed with Trench 9 Trench MOS technology for high efficiency. Half-bridge configuration reduces PCB layout complexity. Optimized package design improves thermal resistance and system performance. High power dissipation capacity of 85W for demanding applications.
Wide operating temperature range from -55°C to 175°C. Low maximum drain-source resistance of 4.2 mΩ for reduced power loss. Maximum gate-source voltage rating of 20V ensures reliable switching. Qualified AEC-Q101 grade technology, suitable for automotive use.
Two elements per chip support half-bridge configurations. Explore EnvMart's comprehensive range of Power MOSFETs to find the ideal component for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 98 amperes.
The maximum drain-source voltage rating is 40 volts.
It can dissipate up to 85 watts of power.
The operating temperature range is from -55°C to 175°C.
The maximum gate-source voltage rating is 20 volts.
The maximum drain-source resistance is 4.2 milliohms.
It uses a compact 8-pin LFPAK56D surface mount package.
There are 2 elements per chip, supporting half-bridge configurations.
Yes, it is qualified under AEC-Q101 grade technology for automotive use.
The device complies with RoHS standards.
The half-bridge configuration helps reduce PCB layout complexity and enhances thermal management.
It is frequently used in 3-phase motor drives, power converters, and automotive powertrain systems.
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