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onsemi SUPERFET III N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 13.28mm |
| Length | 10.2mm |
| Model | NTH4LN040N65S3H |
| Width | 2.4mm |
| Mount Type | Surface |
| Series | SUPERFET III |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 62A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 379W |
| Typical Gate Charge Qg @ Vgs | 132nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
| Internal Gate Resistance | 0.7 Ω |
Key Features
- This enhancement mode MOSFET offers ultra-low on-resistance of 40 mΩ for high efficiency.
- The device features a maximum power dissipation of 379 W and can operate up to 175°C.
- It has a typical gate charge of 132 nC and maximum gate-source voltage rating of 20 V.
- Designed with charge balance technology for minimal conduction loss and superior switching performance.
- Compact package dimensions of 13.28 mm height, 10.2 mm length, and 2.4 mm width ensure suitability for surface mounting.
- The MOSFET is 100% avalanche tested and RoHS compliant.
- Ideal for industrial power management, high efficiency motor control, switching power supplies, and other demanding applications.
Product Description
onsemi NTH4LN040N65S3H is a SUPERFET III N-Channel MOSFET designed for high voltage and high current applications, with a continuous drain current capacity of 62 A and drain-source voltage rating of 650 V. This enhancement mode device features a 4-pin TO-247 package designed for surface mounting, delivering excellent thermal and electrical performance.
Utilizing ON Semiconductor's advanced charge balance technology, this MOSFET achieves exceptionally low on-resistance (40 mΩ typical) and ultra-low gate charge (132 nC typical), minimizing conduction losses and improving switching speed. The device withstands maximum power dissipation up to 379 W and operates reliably over a temperature range from -55°C to 175°C.
With a maximum gate-source voltage of 20 V, and low forward voltage of 1.3 V, the NTH4LN040N65S3H is suitable for demanding industrial, commercial, and HVAC power control systems. The compact TO-247 form factor (13.28 mm height, 10.2 mm length, 2.4 mm width) enables easy integration into power modules and assemblies.
This MOSFET is 100% avalanche tested and RoHS compliant, assuring both reliability and environmental compliance. It is widely used in applications like power conversion, motor drives, automotive electronics, and industrial power supplies where efficiency and robustness are critical.
This enhancement mode MOSFET offers ultra-low on-resistance of 40 mΩ for high efficiency. The device features a maximum power dissipation of 379 W and can operate up to 175°C. It has a typical gate charge of 132 nC and maximum gate-source voltage rating of 20 V.
Designed with charge balance technology for minimal conduction loss and superior switching performance. Compact package dimensions of 13.28 mm height, 10.2 mm length, and 2.4 mm width ensure suitability for surface mounting.
The MOSFET is 100% avalanche tested and RoHS compliant. Ideal for industrial power management, high efficiency motor control, switching power supplies, and other demanding applications. Explore more onsemi MOSFETs and related semiconductor products at EnvMart for advanced power electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 62 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
The typical on-resistance for this model is 40 mΩ.
It features a maximum power dissipation of 379 W.
The operating temperature range for this device is from -55°C to 175°C.
The package dimensions are 13.28 mm in height, 10.2 mm in length, and 2.4 mm in width.
The typical gate charge for this model is 132 nC.
The maximum gate-source voltage rating is 20 V.
The forward voltage for this MOSFET is 1.3 V.
Yes, this model is RoHS compliant.
It is suitable for applications such as industrial power management, high efficiency motor control, and switching power supplies.
This device utilizes charge balance technology for minimal conduction loss and superior switching performance.
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