onsemi SUPERFET III N-Channel MOSFET 10 A, 650 V, 3-Pin TO-220 NTPF360N65S3H

onsemi NTPF360N65S3H is a SUPERFET III N-Channel MOSFET designed for high voltage and power applications.

This device supports a maximum continuous drain current of 10 A and a drain-source voltage rating of 650 V, ensuring reliable performance under demanding electrical conditions. Packaged in a 3-pin TO-220 case, it facilitates through-hole mounting, ideal for industrial and commercial electronics.

It leverages charge balance technology to achieve outstanding low on-resistance and minimized gate charge, which reduces conduction losses and enhances switching speed and efficiency. The MOSFET withstands high dv/dt rates, improving system robustness and reliability.

Key features include a maximum power dissipation of 26 W, a typical gate charge of 17.5 nC, and an operating temperature range from -55°C to 175°C. The maximum gate-source voltage is 30 V, and the device has a forward voltage of 1.2 V, suitable for various power electronic circuits.

This MOSFET is 100% avalanche tested and meets the environmental standards for RoHS and lead-free compliance. Utilizes advanced charge balance technology for low on-resistance and reduced gate charge. Designed to minimize conduction loss and enhance switching performance.

Withstands extreme dv/dt rates ensuring device robustness. Rated for 10 A continuous current and 650 V drain-source voltage. Packaged in TO-220 case for through-hole mounting applications. High maximum power dissipation of 26 watts.

Extensive operating temperature range for industrial use. Meets RoHS and lead-free environmental requirements. This product is well suited for industrial, power management, and electronic applications requiring efficient, reliable MOSFET devices.

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