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onsemi SUPERFET III N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 Package FCPF250N65S3R0L-F154
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.8mm |
| Length | 16.2mm |
| Model | FCPF250N65S3R0L-F154 |
| Width | 10.4mm |
| Mount Type | Through Hole |
| Series | SUPERFET III |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 39W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET utilizes charge balance technology for low on-resistance and reduced gate charge.
- It supports a maximum continuous drain current of 12 A and maximum power dissipation of 39 W.
- Designed for through-hole mounting with a TO-220 package and 3 pins for connectivity.
- Operates efficiently from -55°C up to a maximum of 150°C.
- The device offers low forward voltage of 1.2 V and maximum gate source voltage of 30 V.
- Typical gate charge is 24 nC at specified gate voltage, enabling superior switching performance.
- It is Pb-free and RoHS compliant, ensuring environmentally friendly usage.
- Rated for avalanche robustness with high dv/dt capability.
Product Description
onsemi FCPF250N65S3R0L-F154 is a SUPERFET III N-Channel MOSFET designed for high voltage and current handling capabilities in power electronic circuits. It supports a continuous drain current of 12 A and a maximum drain source voltage of 650 V, housed within a 3-Pin TO-220 package ideal for through-hole mounting.
This MOSFET employs advanced charge balance technology to significantly reduce on-resistance and gate charge, minimizing conduction losses and enhancing switching efficiency. It features a maximum power dissipation rating of 39 W and operates within a temperature range of -55°C to 150°C, making it well-suited for demanding industrial environments.
The device has a low forward voltage drop of 1.2 V and a maximum gate source voltage rating of 30 V, along with a typical gate charge of 24 nC, ensuring swift switching and reduced power loss.
Physically compact, it measures 16.2 mm in length, 10.4 mm in width, and 4.8 mm in height. The FCPF250N65S3R0L-F154 is Pb-free and RoHS compliant, supporting eco-friendly manufacturing practices. It has been 100% avalanche tested and withstands extreme dv/dt rates, enhancing reliability in power electronics applications.
This MOSFET is highly suitable for use in various sectors including industrial systems, power management, electronic components manufacturing, and semiconductor device assemblies. The MOSFET utilizes charge balance technology for low on-resistance and reduced gate charge.
It supports a maximum continuous drain current of 12 A and maximum power dissipation of 39 W. Designed for through-hole mounting with a TO-220 package and 3 pins for connectivity. Operates efficiently from -55°C up to a maximum of 150°C.
The device offers low forward voltage of 1.2 V and maximum gate source voltage of 30 V. Typical gate charge is 24 nC at specified gate voltage, enabling superior switching performance. Compact dimensions: length 16.2 mm, width 10.4 mm, height 4.8 mm.
It is Pb-free and RoHS compliant, ensuring environmentally friendly usage. Rated for avalanche robustness with high dv/dt capability. Suitable for industrial, electronic components, power management, and semiconductor applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
It has a maximum drain source voltage rating of 650 V.
The maximum power dissipation for this MOSFET is 39 W.
The typical gate charge is 24 nC at the specified gate voltage.
This model measures 16.2 mm in length, 10.4 mm in width, and 4.8 mm in height.
It operates efficiently from -55°C up to a maximum of 150°C.
The device is housed in a TO-220 package designed for through-hole mounting.
The maximum gate source voltage rating is 30 V.
It has a low forward voltage drop of 1.2 V.
This MOSFET has a pin count of 3.
Yes, it is Pb-free and RoHS compliant, ensuring environmentally friendly usage.
It utilizes charge balance technology for low on-resistance and reduced gate charge.
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