$2.84
$2.75
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel Reverse Conducting IGBT, 83 A, 650 V, 3-Pin TO-247, Through Hole IHW50N65R6XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IHW50N65R6XKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 83A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 251W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Features a 3-pin TO-247 package with through-hole mounting for easy integration.
- Maximum power dissipation rating of 251 W ensures reliable performance in demanding circuits.
- Capable of operating in temperatures ranging from -40°C to 175°C.
- Includes a maximum gate-emitter voltage of 20 V for stable gate control.
- Utilizes TrenchStop technology for enhanced efficiency and low saturation voltage.
- Integrated monolithic diode supports reverse conduction functionality.
- Suitable for induction heating applications using half-bridge resonant topology between 20-75 kHz.
- Designed to provide low electromagnetic interference (EMI) with tight parameter distribution.
Product Description
The Infineon IHW50N65R6XKSA1 is a high-performance N-Channel Reverse Conducting Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. This device incorporates a monolithically integrated diode within a 3-pin TO-247 through-hole package, facilitating easy mounting and robust thermal handling.
It supports a maximum continuous collector current of 83 A and a maximum collector-emitter voltage of 650 V, making it suitable for medium to high power circuits. The device dissipates up to 251 W of power, ensuring stability under intense operating conditions.
Key technical features include a maximum gate-emitter voltage of 20 V and operation across an extensive temperature range from -40°C to 175°C. Utilization of TrenchStop technology enhances efficiency by lowering saturation voltage, boosting switching performance with minimal losses.
This IGBT is specifically optimized for induction heating applications employing half-bridge resonant topologies at frequencies between 20 kHz and 75 kHz. The device demonstrates very low electromagnetic interference (EMI) and exhibits tight parameter distribution for predictable behavior in industrial environments.
3-pin TO-247 package with through-hole mounting. Integrated monolithic diode allows reverse conduction. Supports 83 A continuous collector current at 650 V voltage rating. Maximum power dissipation of 251 W enables robust load handling.
Maximum operating junction temperature up to 175°C for demanding thermal conditions. 20 V maximum gate-emitter voltage for stable control. TrenchStop series technology improves efficiency and switching performance. Ideal for induction heating and power switching applications in industrial, manufacturing, and HVAC sectors.
This high-performance Infineon IGBT is a reliable solution for engineers and designers requiring efficient, durable semiconductor devices in power control and conversion systems. Explore more IGBTs and discrete semiconductor components on EnvMart for cutting-edge electronic solutions.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous collector current for this model is 83 A.
It has a maximum collector-emitter voltage rating of 650 V.
The maximum power dissipation rating is 251 W, allowing for reliable performance in demanding circuits.
It can operate in temperatures ranging from -40°C to 175°C.
This model features a 3-pin TO-247 package with through-hole mounting for easy integration.
The maximum gate-emitter voltage is 20 V, providing stable gate control.
It utilizes TrenchStop technology, which enhances efficiency and reduces saturation voltage.
Yes, it includes an integrated monolithic diode that supports reverse conduction functionality.
It is specifically optimized for induction heating applications using half-bridge resonant topology at frequencies between 20 kHz and 75 kHz.
The package type is TO-247, which facilitates robust thermal handling.
The maximum collector-emitter saturation voltage is 1.6 V.
The country of origin for the IHW50N65R6XKSA1 is India.
Related Products
$16.85
$16.35
-3%
New
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$2.84
$2.75
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent