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onsemi N-Channel MOSFET TO-220 40 A 650 V Enhancement Mode 3-Pin NTP067N65S3H
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | NTP067N65S3H |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | NTP067N |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 67mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 266W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for high voltage with 650 V maximum drain-source voltage.
- Handles a maximum continuous drain current of 40 A for power applications.
- Features low drain-source resistance of 67 milliohms for efficiency.
- Uses enhancement mode channel type for reliable switching performance.
- Comes in a through-hole TO-220 package with 3 pins for easy PCB mounting.
- Supports maximum gate-source voltage of 30 V to ensure operation stability.
- Maximum power dissipation of 266 W supports heavy-duty usage.
- Operational temperature range from -55°C to 175°C for harsh environments.
Product Description
onsemi NTP067N65S3H is an N-Channel MOSFET designed for power electronic applications requiring high voltage and current capabilities. Packaged in a through-hole TO-220 type housing with 3 pins, this MOSFET supports a maximum continuous drain current of 40 A and a drain-source voltage of 650 V. It operates in enhancement mode, delivering excellent switching performance and high efficiency.
This device features a very low drain-source resistance of 67 milliohms, minimizing conduction losses in circuits. Its maximum power dissipation is rated at 266 W, enabling it to handle substantial power in industrial, automotive, and commercial electronic systems.
The MOSFET supports a maximum gate-source voltage of 30 V and typical gate charge of 80 nC, which allows for fast switching and efficient control. It functions reliably in an operating temperature range from -55°C to 175°C, making it suitable for extreme environmental conditions and robust industrial applications.
The compact dimensions of 10.67 mm length, 4.7 mm width, and 16.3 mm height ensure compatibility with standard PCB layouts. Environmental compliance is ensured as this component is RoHS certified, supporting safer manufacturing and disposal practices.
High voltage super-junction MOSFET technology enhances performance with low on-resistance and gate charge. Ideal for use in industrial power management, automotive electronics, motor control, and switching power supplies.
Through-hole TO-220 package ensures easy mounting and heat dissipation. Rated for high power dissipation and wide operating temperature range for reliability. RoHS compliant for environmental safety standards.
This onsemi MOSFET NTP067N65S3H is suited for applications in electronics manufacturing, industrial control systems, and power conversion equipment. Browse more MOSFETs in the Discrete Semiconductors category on EnvMart for alternative specifications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A, making it suitable for power applications.
This MOSFET has a maximum drain-source voltage rating of 650 V, allowing it to handle high voltage applications effectively.
It comes in a through-hole TO-220 package, which facilitates easy PCB mounting.
The drain-source resistance is rated at 67 milliohms, which helps to minimize conduction losses.
The maximum power dissipation for this unit is 266 W, supporting heavy-duty usage in various applications.
The maximum gate-source voltage supported by this MOSFET is 30 V, ensuring operational stability.
The dimensions are 10.67 mm in length, 4.7 mm in width, and 16.3 mm in height, ensuring compatibility with standard PCB layouts.
This model uses an enhancement mode channel type, which provides reliable switching performance.
The typical gate charge is 80 nC, allowing for fast switching and efficient control.
Yes, this component is RoHS certified, supporting safer manufacturing and disposal practices.
It is suitable for applications in industrial power management, automotive electronics, motor control, and switching power supplies.
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