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Infineon HEXFET Power N-Channel MOSFET 81A 20V Enhancement Mode 2-Pin DirectFET IRF6636TRPBF

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 680μm
Length 4.85mm
Model IRF6636TRPBF
Width 3.95mm
Mount Type Surface
Series HEXFET
Package Type DirectFET
Pin Count 2
Channel Type N
Maximum Continuous Drain Current Id 81A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 6.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 42W
Typical Gate Charge Qg @ Vgs 18nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Advanced HEXFET silicon technology ensures low on-state resistance and reduced conduction losses.
  • Compact DirectFET packaging offers a footprint similar to SO-8 with 0.7 mm profile height.
  • Surface mount design compatible with PCB assembly and multiple soldering techniques.
  • Maximum power dissipation of 42W supports demanding applications safely.
  • Typical gate charge of 18nC at 20V gate voltage enables efficient switching performance.
  • Maximum continuous drain current of 81A suits high current power conversion.
  • Low package inductance minimizes switching losses in CPU core voltage regulators and DC-DC converters.
  • Forward voltage of 1V improves efficiency in power management circuits.

Product Description

Infineon IRF6636TRPBF HEXFET Power N-Channel MOSFET features an advanced silicon design integrating HEXFET technology within a 2-pin DirectFET surface mount package. This MOSFET offers a high maximum continuous drain current of 81A and a drain-source voltage rating of 20V, optimized for power conversion applications requiring efficient switching and low conduction losses.

The ultra-low package inductance of the DirectFET package combined with a low on-state resistance improves efficiency in CPU core DC-DC converters, motor drives, and other industrial electronics. The device’s compact footprint mimics the size of an SO-8 package but with a reduced profile height of only 0.7 mm, making it ideal for space-constrained PCB layouts.

The MOSFET supports a maximum power dissipation of 42W, allowing reliable operation under substantial load. Its typical gate charge of 18nC at a gate-source voltage of 20V ensures fast switching capabilities, reducing losses in switching applications.

With surface mount compatibility, the IRF6636TRPBF can be assembled using standard PCB assembly equipment and various soldering methods, including vapor phase, infrared, or convection soldering, following recommended manufacturing processes.

The device’s forward voltage of about 1V contributes to system efficiency by minimizing conduction losses in power management tasks. Dimensions include a length of 4.85 mm, width of 3.95 mm, and a height of 680 μm, making it a compact choice for dense electronic assemblies.

This MOSFET is well-suited for industrial electronics, computing power supplies, telecommunications, automotive electronics not requiring automotive standard, and other applications demanding high current capacity and efficient heat management.

Advanced HEXFET silicon technology for efficient power handling. DirectFET low-profile surface mount packaging. High continuous drain current of 81A. Rated for 20V drain-source voltage. Low gate charge for fast switching.

Compact footprint suitable for high-density PCBs. Maximum power dissipation of 42W. Compatible with common PCB soldering techniques. Reliable operation in industrial and power conversion applications. Ideal for CPU voltage regulator and DC-DC converter circuits.

Explore our Electronics & Electricals category for more power semiconductors and MOSFET solutions suited for diverse engineering applications.

Explore more products in our Power MOSFET category.

Infineon HEXFET Power N-Channel MOSFET 81A 20V Enhancement Mode 2-Pin DirectFET IRF6636TRPBF
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Frequently Asked Questions

The maximum continuous drain current of the IRF6636TRPBF is 81A, making it suitable for high current power conversion applications.

This model has a maximum drain-source voltage rating of 20V, which is critical for its operation in various applications.

The typical gate charge at a gate-source voltage of 20V is 18nC, which enables efficient switching performance.

The IRF6636TRPBF supports a maximum power dissipation of 42W, allowing it to operate reliably under substantial load conditions.

The dimensions of the IRF6636TRPBF are 4.85 mm in length, 3.95 mm in width, and 680 μm in height, making it compact for high-density applications.

This model features a DirectFET package type, which is designed for surface mounting and provides a low profile.

The forward voltage of the IRF6636TRPBF is approximately 1V, which helps improve efficiency in power management circuits.

The maximum drain-source resistance (Rds) is 6.4mΩ, contributing to low conduction losses during operation.

This model is well-suited for applications such as CPU core DC-DC converters, motor drives, and other industrial electronics requiring high current capacity.

The IRF6636TRPBF is designed for surface mounting, which is compatible with various PCB assembly techniques.

This model is an N-channel MOSFET, which is commonly used in power conversion applications.

The IRF6636TRPBF can be assembled using standard PCB soldering methods, including vapor phase, infrared, or convection soldering.

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