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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 680μm |
| Length | 4.85mm |
| Model | IRF6636TRPBF |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | HEXFET |
| Package Type | DirectFET |
| Pin Count | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 81A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 6.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IRF6636TRPBF HEXFET Power N-Channel MOSFET features an advanced silicon design integrating HEXFET technology within a 2-pin DirectFET surface mount package. This MOSFET offers a high maximum continuous drain current of 81A and a drain-source voltage rating of 20V, optimized for power conversion applications requiring efficient switching and low conduction losses.
The ultra-low package inductance of the DirectFET package combined with a low on-state resistance improves efficiency in CPU core DC-DC converters, motor drives, and other industrial electronics. The device’s compact footprint mimics the size of an SO-8 package but with a reduced profile height of only 0.7 mm, making it ideal for space-constrained PCB layouts.
The MOSFET supports a maximum power dissipation of 42W, allowing reliable operation under substantial load. Its typical gate charge of 18nC at a gate-source voltage of 20V ensures fast switching capabilities, reducing losses in switching applications.
With surface mount compatibility, the IRF6636TRPBF can be assembled using standard PCB assembly equipment and various soldering methods, including vapor phase, infrared, or convection soldering, following recommended manufacturing processes.
The device’s forward voltage of about 1V contributes to system efficiency by minimizing conduction losses in power management tasks. Dimensions include a length of 4.85 mm, width of 3.95 mm, and a height of 680 μm, making it a compact choice for dense electronic assemblies.
This MOSFET is well-suited for industrial electronics, computing power supplies, telecommunications, automotive electronics not requiring automotive standard, and other applications demanding high current capacity and efficient heat management.
Advanced HEXFET silicon technology for efficient power handling. DirectFET low-profile surface mount packaging. High continuous drain current of 81A. Rated for 20V drain-source voltage. Low gate charge for fast switching.
Compact footprint suitable for high-density PCBs. Maximum power dissipation of 42W. Compatible with common PCB soldering techniques. Reliable operation in industrial and power conversion applications. Ideal for CPU voltage regulator and DC-DC converter circuits.
Explore our Electronics & Electricals category for more power semiconductors and MOSFET solutions suited for diverse engineering applications.
Explore more products in our Power MOSFET category.
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