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Infineon N-Channel IGBT, 75 A, 650 V, 3-Pin TO-247 Through Hole IGW75N65H5XKSA1

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Infineon N-Channel IGBT, 75 A, 650 V, 3-Pin TO-247 Through Hole IGW75N65H5XKSA1

Name: Infineon N-Channel IGBT, 75 A, 650 V, 3-Pin TO-247 Through Hole IGW75N65H5XKSA1
Brand: Infineon
SKU: 321588
Price: 3.98 USD
Availability: InStock

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Category IGBT Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	5.21mm
Length	21.1mm
Model	IGW75N65H5XKSA1
Width	16.13mm
Mount Type	Through Hole
Series	IGW75N65H5
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-40°C
Standards/Approvals	JEDEC, RoHS
Pin Count	3
Maximum Continuous Collector Current Ic	75A
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
Channel Type	N
Maximum Power Dissipation Pd	198W
Maximum Gate Emitter Voltage VGEO	20 V
Number of Transistors	1

Key Features

Maximum continuous collector current of 75 amperes for efficient power handling.
Collector-emitter voltage rating of 650 volts suitable for high-voltage applications.
Power dissipation capacity of 198 watts ensures robust thermal management.
Features a 3-pin TO-247 through-hole package for easy installation.
Operating temperature range from -40°C to 175°C for extended reliability.
Maximum gate-emitter voltage of 20 volts provides safe gate driving specifications.
Low collector-emitter saturation voltage of 1.65 volts minimizes conduction losses.
Compliant with JEDEC and RoHS standards ensuring industry compliance.

Product Description

Infineon IGW75N65H5XKSA1 N-Channel IGBT is a robust semiconductor device designed to handle continuous collector currents up to 75 A and withstand collector-emitter voltages up to 650 V. Packaged in a 3-pin TO-247 form factor and intended for through-hole mounting, this transistor features Infineon's cutting-edge TRENCHSTOP IGBT5 technology that reduces junction and case temperatures, thus delivering superior reliability and efficient operation in hard switching environments.

The device supports a maximum power dissipation of 198 W, allowing it to manage high power loads effectively while maintaining thermal stability. It operates reliably in ambient temperatures ranging from -40°C to 175°C, making it suitable for demanding industrial, automotive, and power electronics applications.

With a maximum gate-emitter voltage of 20 V and a low collector-emitter saturation voltage of 1.65 V, the IGW75N65H5XKSA1 offers enhanced efficiency through minimal conduction losses. Its 3-pin construction simplifies installation in power assemblies, and its package dimensions (length 21.1 mm, width 16.13 mm, height 5.21 mm) facilitate easy integration into existing circuits.

The device meets JEDEC and RoHS compliance standards, ensuring adherence to global quality and environmental regulations. It is an optimal choice for applications in industrial motor drives, power conversion, and advanced switching devices requiring both durability and high performance.

Maximum continuous collector current of 75 amperes for efficient power handling. Collector-emitter voltage rating of 650 volts suitable for high-voltage applications. Power dissipation capacity of 198 watts ensures robust thermal management.

Features a 3-pin TO-247 through-hole package for easy installation. Operating temperature range from -40°C to 175°C for extended reliability. Maximum gate-emitter voltage of 20 volts provides safe gate driving specifications.

Low collector-emitter saturation voltage of 1.65 volts minimizes conduction losses. Compliant with JEDEC and RoHS standards ensuring industry compliance.

This Infineon IGBT is suited for use in industrial power electronics, motor control, inverter circuits, and other applications demanding reliable switching performance under high voltage and current conditions. Explore more high-quality IGBTs and semiconductors in our Electronics & Electricals category at EnvMart.

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Frequently Asked Questions

The maximum continuous collector current for this model is 75 amperes, allowing for efficient power handling in various applications.

This IGBT has a collector-emitter voltage rating of 650 volts, making it suitable for high-voltage applications.

The maximum power dissipation capacity is 198 watts, ensuring robust thermal management during operation.

It operates reliably within an ambient temperature range of -40°C to 175°C, providing extended reliability in demanding conditions.

This model features a 3-pin TO-247 through-hole package, which simplifies installation in power assemblies.

The maximum gate-emitter voltage is 20 volts, providing safe gate driving specifications for reliable operation.

The low collector-emitter saturation voltage is 1.65 volts, which helps minimize conduction losses during operation.

It is compliant with JEDEC and RoHS standards, ensuring adherence to industry quality and environmental regulations.

The dimensions are 21.1 mm in length, 16.13 mm in width, and 5.21 mm in height, facilitating easy integration into circuits.

This IGBT is suitable for applications in industrial motor drives, power conversion, and advanced switching devices requiring reliable performance under high voltage and current conditions.

This model contains one transistor, designed to handle significant power loads effectively.

The channel type of this device is N-channel, which is commonly used in power electronics for efficient switching.