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Infineon 500V CoolMOS CE N-Channel Power MOSFET, 7.6 A Continuous Drain Current, 500 V Drain Source IPD50R500CEAUMA1

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Infineon 500V CoolMOS CE N-Channel Power MOSFET, 7.6 A Continuous Drain Current, 500 V Drain Source IPD50R500CEAUMA1

Name: Infineon 500V CoolMOS CE N-Channel Power MOSFET, 7.6 A Continuous Drain Current, 500 V Drain Source IPD50R500CEAUMA1
Brand: Infineon
SKU: 321569
Price: 0.57 USD
Availability: InStock

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Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.41mm
Length	6.73mm
Model	IPD50R500CEAUMA1
Width	6.22mm
Mount Type	Surface
Series	500V CoolMOS CE
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	7.6A
Maximum Drain Source Voltage Vds	500V
Maximum Drain Source Resistance Rds	500mΩ
Channel Mode	N
Maximum Power Dissipation Pd	57W
Typical Gate Charge Qg @ Vgs	18.7nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	850mV

Key Features

Features CoolMOS CE technology for high voltage efficiency.
Superjunction MOSFET design for fast switching and low losses.
Maximum power dissipation of 57W for robust operation.
Typical gate charge of 18.7nC ensures efficient gate drive.
Operating temperature range from -55°C to 150°C.
Mount type is surface mount with TO-252 package for PCB assembly.
Maximum gate source voltage of ±20V for flexible control.
Designed for industrial, power management, and switching applications.

Product Description

Infineon IPD50R500CEAUMA1 is a high-voltage, N-channel CoolMOS™ CE power MOSFET featuring a 500V drain source voltage and 7.6A continuous drain current capability. Utilizing advanced superjunction technology, this device offers fast switching speeds and excellent efficiency, making it ideal for power conversion, industrial automation, and high-performance power supplies.

This MOSFET is housed in a compact TO-252 package supporting surface mount assembly. The device supports a maximum power dissipation of 57W, typical gate charge of 18.7nC at Vgs, and a gate source voltage rating of ±20 V, enabling versatile use in demanding conditions. The temperature range from -55°C to 150°C ensures reliability across a variety of environments.

The superjunction design provides very high commutation ruggedness and low conduction losses. It uses lead-free plating and a halogen-free mold compound promoting environmental compliance. The three-pin configuration simplifies circuit design and integration.

This MOSFET is extensively used in industrial electronics, power management circuits, renewable energy systems, and automotive applications requiring efficient, high-voltage switching components. Its compact size and surface mount package help accommodate dense PCB layouts.

CoolMOS CE series Power MOSFET technology enhancing efficiency and switching performance. High breakdown voltage and current capability for industrial and power management use cases. Robust thermal and electrical characteristics ensure dependable operation under stress.

Environmentally friendly manufacturing with lead-free and halogen-free components. Compact TO-252 surface mount package provides ease of installation. Suitable for designing high-performance power converters and motor drivers.

Explore more high-quality power semiconductor devices on EnvMart for sophisticated electronic applications.