Infineon CoolMOS CE N-Channel MOSFET 2.6 A 600 V Enhancement 3-Pin TO-251 IPS60R3K4CEAKMA1

The Infineon IPS60R3K4CEAKMA1 CoolMOS CE N-Channel MOSFET is an advanced semiconductor device designed for both hard and soft switching applications, utilizing modern superjunction technology to minimize conduction and switching losses. With a maximum continuous drain current of 2.6 A and a drain-source voltage rating of 600 V, this MOSFET offers reliable performance across a broad temperature range from -40°C to 150°C.

Featuring the TO-251 package with a through-hole mount, it is well suited for integration into power electronic circuits, including low power chargers for mobile phones and tablets. The device achieves efficient switching by combining an optimal R DS(on) and reduced body diode reverse recovery charge, which enhances overall power efficiency and reduces energy consumption.

Technical highlights include a maximum power dissipation of 38 watts, a typical gate charge of 6.7 nC at the gate-source voltage, and a maximum drain-source resistance of 3.4 ohms, contributing to its low conduction losses. The forward voltage is limited to 900 mV, and the MOSFET's compact physical dimensions simplify assembly while maintaining high ruggedness.

Industries such as consumer electronics, industrial automation, and power management benefit from the Infineon CoolMOS CE series due to its superior electrical characteristics and durability. The product is designed to operate efficiently in industrial, laboratory, and commercial environments where reliable power switching is paramount.

This MOSFET utilizes enhancement channel mode for efficient switching. Maximum power dissipation is rated at 38 watts for robust performance. It has a typical gate charge of 6.7 nanocoulombs at Vgs. Designed with a maximum drain-source resistance of 3.4 ohms.

Operating temperature ranges from -40°C to 150°C. Forward voltage drop is 900 millivolts, ensuring low conduction losses. Through hole mount type suitable for standard PCB assembly. Compact dimensions: height 9.82 mm, length 6.73 mm, width 2.4 mm.

Optimized for low conduction and switching losses improving efficiency in charging devices.

This Infineon CoolMOS CE MOSFET is a critical component for enhancing efficiency and reducing power dissipation in electronic power circuits. For further exploration of semiconductor components, browse our Electronics & Electricals section at EnvMart.