STMicroelectronics N-Channel MOSFET PowerFLAT Package 40A 650V Enhancement Mode 4-Pin SCTL35N65G2V

STMicroelectronics SCTL35N65G2V is an N-Channel MOSFET designed using advanced 2nd generation silicon carbide (SiC) technology offering excellent switching performance and remarkably low on-resistance per unit area. The device is packaged in a compact 4-pin PowerFLAT surface mount format suitable for dense electronic assemblies.

With a maximum continuous drain current rating of 40 amperes and a maximum drain-source voltage of 650 volts, it supports high power applications requiring efficient switching and enhanced thermal robustness. The enhancement mode channel type and a maximum gate-source voltage of 22 volts provide flexible control in various industrial and power management circuits.

This MOSFET contains a very fast and robust intrinsic body diode and features a source sensing pin that improves efficiency in power regulation and conversion systems. Typical gate charge is 73 nanocoulombs at rated gate-source voltage, facilitating low switching losses for high-frequency applications.

The device operates reliably across a broad temperature range from -55°C to 175°C, ensuring suitability for automotive, industrial, and renewable energy environments. Its maximum power dissipation capacity of 417 watts supports demanding load conditions and power densities.

Dimensions of the device are 8.1 mm in length and width, with a height of 950 micrometers, enabling compact PCB layouts. This model lacks automotive standard certification but is intended for demanding power electronic designs.

Applications include industrial power supplies, motor drives, renewable energy conversion, and automotive power electronics (excluding certified automotive systems). STMicroelectronics’ SCTL35N65G2V MOSFET provides a balance of low conduction losses, rapid switching, and robust thermal management.

Designed with advanced 2nd generation SiC MOSFET technology. Low on-resistance increases efficiency in power switching. Very fast intrinsic body diode for improved performance. Source sensing pin enhances control efficiency.

High maximum continuous drain current of 40 amperes. Supports operation between -55°C and 175°C. Maximum gate-source voltage rating of 22 volts. Compact 4-pin PowerFLAT surface mount package. Reliable power dissipation up to 417 watts.

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