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onsemi N-Channel MOSFET 52 A, 40 V Enhancement, 4-Pin LFPAK Package NVMYS7D3N04CLTWG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.15mm |
| Length | 5mm |
| Model | NVMYS7D3N04CLTWG |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | NVMYS7D3N04CL |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 52A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 12mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device features an enhancement channel mode for optimum switching performance.
- It uses a 4-pin LFPAK surface mount package measuring 5 mm by 4.25 mm with 1.15 mm height.
- Maximum drain-source resistance (Rds) is 12 milliohms, minimizing conduction losses.
- Maximum power dissipation is 38 W, suitable for moderate power applications.
- This MOSFET operates reliably in temperatures from -55°C up to 175°C.
- The typical gate charge is 7 nC at gate-source voltage, enabling efficient drive requirements.
- It supports a maximum gate-source voltage of 20 V allowing robust gate control.
- Automotive standard AEC-Q101 certified, making it suitable for automotive electronics with enhanced reliability.
Product Description
onsemi NVMYS7D3N04CLTWG is a surface-mount N-Channel MOSFET designed for automotive and industrial power management applications that require compact size and high efficiency.
This MOSFET supports a continuous drain current of 52 A and a maximum drain-source voltage rating of 40 V, making it suitable for switching and load driving operations in compact power circuits.
The 4-pin LFPAK package provides a low profile with a footprint of 5 mm x 4.25 mm and a height of just 1.15 mm, enabling space-saving PCB layouts.
Its low on-resistance value of 12 mΩ ensures minimal conduction losses during operation, while the maximum power dissipation rating of 38 W supports moderate load power requirements.
With the capability to operate reliably across a wide temperature range from -55°C to 175°C, this device meets the rigors of automotive environments and industrial settings. The MOSFET features a typical gate charge of 7 nC at the specified gate voltage, minimizing switching losses and facilitating efficient gate drive circuits.
The maximum gate-source voltage is rated at 20 V, allowing for robust signal control and protection under varying drive conditions. Certified to comply with automotive standard AEC-Q101, this device is PPAP capable and suitable for enhanced board level reliability in automotive electronic modules.
The 4-pin LFPAK package is standard in the industry for automotive power MOSFETs. Low capacitance characteristics minimize driver losses, improving overall system efficiency. This product is RoHS compliant and Pb-free, supporting environmental standards.
Ideal for automotive electronics, industrial power management, and compact electronics applications requiring reliable switching performance and thermal robustness. Explore the full range of onsemi semiconductor devices at EnvMart for your industrial and automotive electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 52 A.
The maximum drain-source voltage rating is 40 V.
It comes in a 4-pin LFPAK package with dimensions of 5 mm in length, 4.25 mm in width, and a height of 1.15 mm.
The maximum power dissipation is rated at 38 W.
This model operates reliably within a temperature range of -55°C to 175°C.
The typical gate charge is 7 nC at the specified gate-source voltage.
The maximum gate-source voltage is rated at 20 V.
The maximum drain-source resistance (Rds) is 12 milliohms.
Yes, it is certified to comply with automotive standard AEC-Q101.
It features an enhancement channel mode.
This product is RoHS compliant and Pb-free, supporting environmental standards.
It is suitable for automotive electronics, industrial power management, and compact electronics applications requiring reliable switching performance.
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