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Wolfspeed C3M N-Channel MOSFET 11 A 900 V Enhancement Mode Surface Mount 7-Pin TO-263 C3M0280090J
Specifications
| Country of Origin | India |
|---|---|
| Brand | Wolfspeed |
| Height | 4.57mm |
| Length | 10.23mm |
| Model | C3M0280090J |
| Width | 9.12mm |
| Mount Type | Surface |
| Series | C3M |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -8, 18V |
| Forward Voltage Vf | 4.8V |
Key Features
- Supports maximum continuous drain current of 11 amperes.
- Offers a maximum drain-source voltage rating of 900 volts.
- Features a low maximum drain-source resistance of 280 milliohms for efficient conduction.
- Operates within a temperature range from -55°C to 150°C.
- Incorporates fast switching with low gate charge of 10 nC at Vgs.
- Packaged in a TO-263 surface mount for easy PCB integration.
- Channel mode is enhancement type with N channel configuration.
- Designed for high-frequency power electronics including renewable energy inverters and electric vehicle charging.
Product Description
Wolfspeed C3M0280090J is an advanced N-Channel MOSFET suited for high frequency power electronics applications. This 11 A continuous current device supports a high voltage rating of 900 V, optimized for use in renewable-energy inverters, electric vehicle charging systems, and three-phase industrial power supplies.
This MOSFET features an enhancement mode channel type and comes in a compact 7-pin TO-263 surface mount package, enabling efficient heat dissipation and easy PCB assembly. It supports a maximum power dissipation of 50 W, capable of enduring harsh operating conditions between -55°C and 150°C.
With a low drain-source resistance of 280 milliohms and a fast intrinsic diode with low reverse recovery charge, it offers high switching speeds and low conduction losses. The typical gate charge of 10 nC ensures minimal drive power, making it effective in cost-sensitive and high-efficiency power systems.
Other technical features include a gate-source voltage range from -8 V to 18 V and a forward voltage of 4.8 V. Length, width, and height of the device are compact at 10.23 mm, 9.12 mm, and 4.57 mm respectively, providing design flexibility in space-constrained applications.
Supports maximum continuous drain current of 11 A. Voltage rating up to 900 V drain-source. Enhancement mode N-channel type MOSFET. Compact 7-pin TO-263 surface mount package. Maximum power dissipation is 50 W for robust thermal performance.
Operating temperature range from -55°C to 150°C. Low Rds(on) value of 280 mΩ reduces conduction losses. Fast switching with low gate charge of 10 nC. Intrinsically rugged avalanche capability and diode recovery. Ideal for renewable energy, electric vehicle charging, and industrial power supplies.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 amperes.
This MOSFET supports a maximum drain-source voltage rating of 900 volts.
It features a low maximum drain-source resistance of 280 milliohms, which helps in efficient conduction.
The operating temperature range for this model is from -55°C to 150°C.
It is packaged in a compact 7-pin TO-263 surface mount configuration for easy PCB integration.
The typical gate charge at Vgs is 10 nC, which ensures minimal drive power requirements.
This model can handle a maximum power dissipation of 50 watts.
The forward voltage for this MOSFET is rated at 4.8 volts.
It is designed for high-frequency power electronics applications, including renewable energy inverters and electric vehicle charging systems.
The gate-source voltage range is from -8 V to 18 V.
The dimensions are 10.23 mm in length, 9.12 mm in width, and 4.57 mm in height.
This unit features an enhancement mode N-channel configuration.
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