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onsemi Single N-Channel MOSFET 50 mA 25 V Surface Mount 6-Pin CPH Package NSVJ6904DSB6T1G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 0.85mm |
| Length | 2.9mm |
| Model | NSVJ6904DSB6T1G |
| Width | 1.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | CPH |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, PPAP |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50mA |
| Maximum Drain Source Voltage Vds | 25V |
| Transistor Configuration | Single |
Key Features
- Supports operation from -55°C to 150°C for robust thermal performance.
- Single transistor configuration optimized for automotive and industrial use.
- CPH package ensures space-saving design with 2.9 mm length, 1.6 mm width, and 0.85 mm height.
- Complies with AEC-Q101 and PPAP standards for automotive reliability and manufacturing quality.
- Designed for high gain performance with low noise and small capacitance characteristics.
- Lead-free and halogen-free materials enhance environmental compliance.
- Ideal for applications such as AM tuner RF amplification and low noise amplifiers.
Product Description
onsemi NSVJ6904DSB6T1G Single N-Channel MOSFET provides reliable performance with a maximum continuous drain current of 50 mA and a maximum drain-source voltage of 25 V, housed in a compact 6-Pin CPH surface mount package. This device supports operation over a broad temperature range from -55°C to 150°C, making it highly suitable for automotive and demanding industrial environments.
The transistor configuration is a single JFET composite type designed to achieve high gain and efficiency. The MOSFET features a small size with package dimensions of 2.9 mm length, 1.6 mm width, and 0.85 mm height to reduce mounting area on PCBs. It complies with the stringent automotive AEC-Q101 standard and is PPAP capable, ensuring quality and reliability in production.
Additional advantages include ultralow noise figure, small input capacitance (Ciss), and lead-free, halogen-free materials enhancing environmental considerations. The device's design allows the reception of small level signals, enabling use in RF tuner applications and low noise amplifiers.
Typically used in car audio systems and other automotive electronic subsystems, this MOSFET is optimized for both industrial and automotive applications demanding high efficiency and compact size.
This MOSFET operates efficiently within automotive-grade temperature specifications. Compact CPH package aids in space-constrained circuit designs. Manufactured with environmentally friendly Pb-free and halogen-free materials.
Certified to meet automotive quality and reliability standards. Supports applications in audio system amplification and signal processing. Dual JFET integration lowers mounting area compared to discrete components. Suitable for use in RF amplification, low noise amplification, and other sensitive electronic functions.
Explore more high-quality semiconductor components in the Electronics & Electricals category on EnvMart for your industrial and automotive projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 mA.
It can handle a maximum drain-source voltage of 25 V.
This MOSFET supports operation from -55°C to 150°C.
The CPH package has dimensions of 2.9 mm in length, 1.6 mm in width, and 0.85 mm in height.
It complies with AEC-Q101 and is PPAP capable, ensuring automotive reliability and manufacturing quality.
This model features a pin count of 6.
It uses a single transistor configuration optimized for automotive and industrial applications.
It is manufactured using lead-free and halogen-free materials, enhancing environmental compliance.
It is suitable for applications such as RF amplification and low noise amplifiers, particularly in automotive electronic systems.
The channel type of this device is N-Channel.
The low noise characteristics allow for the reception of small level signals, making it suitable for sensitive electronic functions.
The country of origin for this MOSFET is China.
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