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Infineon OptiMOS 5 N-Channel MOSFET 120 A 60 V Enhancement 3-Pin TO-220 IPP020N06NAKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP020N06NAKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 214W |
| Typical Gate Charge Qg @ Vgs | 106nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Designed for through-hole mounting with 3 pins.
- Enhancement mode transistor delivering high efficiency.
- Maximum power dissipation rating of 214 W.
- Operates reliably between -55°C and 175°C.
- Low typical gate charge of 106 nC for fast switching.
- Maximum drain-source resistance of 3 milliohms minimizes conduction losses.
- Robust maximum gate-source voltage range from -20 to +20 V.
- Suitable for power management and industrial applications.
Product Description
Infineon IPP020N06NAKSA1 is a high-performance OptiMOS 5 N-Channel MOSFET designed for power semiconductor applications requiring efficient switching and robust operation.
This device supports a maximum continuous drain current of 120 A and a drain-source voltage of 60 V, packaged in a TO-220 through-hole form factor with 3 pins for easy PCB mounting.
The enhancement channel mode transistor offers a low drain-source resistance of 3 milliohms, ensuring minimal conduction losses and improved power conversion efficiency. Maximum power dissipation is rated at 214 W with an operational temperature range from -55°C to 175°C, highlighting its durability in demanding industrial environments.
The typical gate charge of 106 nC enables fast switching performance, suitable for use in power management, industrial control, and electronic circuits requiring high efficiency and reliability.
Designed for through-hole mounting with a TO-220 package size. High continuous drain current rating of 120 A. Low Rds(on) for reduced power losses. Wide operating temperature range from -55°C to 175°C. Robust gate voltage tolerance ensuring device safety.
Compact physical size facilitating integration in constrained areas. This MOSFET is ideal for applications in power electronics, switching power supplies, motor drives, and other semiconductor-based control systems. Explore more in the MOSFET category on EnvMart for similar high-quality semiconductors from leading manufacturers.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 A.
This MOSFET supports a maximum drain-source voltage of 60 V.
The maximum power dissipation rating is 214 W.
It operates reliably between -55°C and 175°C.
The typical gate charge is 106 nC, which allows for fast switching performance.
The maximum drain-source resistance is 3 milliohms, minimizing conduction losses.
It is designed for through-hole mounting with a TO-220 package type.
This device has 3 pins.
The maximum gate-source voltage is from -20 V to +20 V.
The dimensions are 10.36 mm in length, 4.57 mm in width, and 15.95 mm in height.
It is suitable for power management, industrial control, and electronic circuits requiring high efficiency.
This model belongs to the OptiMOS 5 series.
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