$11.36
$11.02
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics MDmesh M2 N-Channel MOSFET, 52 A, 650 V, Enhancement Mode, 3-Pin TO-247 STW56N60M2
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW56N60M2 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 52A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350W |
| Typical Gate Charge Qg @ Vgs | 91nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- High maximum continuous drain current of 52 amperes.
- 650 volts maximum drain-source voltage rating.
- Encapsulated in a 3-pin TO-247 package for through-hole mounting.
- Low drain-source resistance of 55 milliohms ensures efficient conduction.
- Maximum power dissipation rating of 350 watts.
- Typical gate charge of 91 nanocoulombs supporting fast switching.
- Operating temperature up to 150 degrees Celsius.
- Suitable for resonant-type switching power supplies like LLC converters.
Product Description
STMicroelectronics STW56N60M2 is an N-channel MDmesh™ M2 series power MOSFET designed for high-voltage switching applications. It features a continuous drain current rating of 52 A and a maximum drain-source voltage of 650 V, making it suitable for power management in industrial, electronic, and power supply systems.
This device utilizes enhancement mode operation and is housed in a 3-pin TO-247 package with through-hole mounting for robust installation. The low on-resistance of 55 milliohms and maximum power dissipation of 350 W ensure efficient handling of high power loads with minimal heat generation, supported by an operating temperature rating up to 150°C.
With a typical gate charge of 91 nC, it supports rapid switching cycles, ideal for resonant-type switching power supplies such as LLC converters. This MOSFET features a forward voltage drop of 1.6 V and gate-source voltage limits from -25 V to +25 V, providing reliable performance in demanding applications.
The device is manufactured in China and does not carry any specific automotive or industry-standard certifications, focusing instead on high performance and reliability for general industrial, manufacturing, and electronics power supply tasks.
Key technical highlights include its compact dimensions of 20.15 mm height, 15.75 mm length, and 5.15 mm width, and a robust build suitable for use in discrete semiconductor assemblies.
High continuous drain current at 52 A. 650 V maximum drain-source voltage. 3-pin TO-247 package with through-hole mount. Low on-resistance of 55 mΩ for efficient conduction. Maximum power dissipation of 350 W. Typical gate charge of 91 nC for fast switching.
Operating temperature up to 150°C. Forward voltage of 1.6 V enhances overall efficiency. Enhancement mode operation suitable for switching applications. Compact size and solid build quality.
This STMicroelectronics MOSFET is widely used in electronics design, power supplies, industrial machinery, and laboratory equipment requiring reliable high current and voltage control.
Explore more Power MOSFETs and semiconductor devices from our extensive catalog at EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 52 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
It is housed in a 3-pin TO-247 package designed for through-hole mounting.
The low drain-source resistance is 55 milliohms, ensuring efficient conduction.
The maximum power dissipation rating is 350 watts.
The typical gate charge is 91 nanocoulombs, supporting fast switching operations.
The maximum operating temperature is up to 150 degrees Celsius.
It is suitable for resonant-type switching power supplies, such as LLC converters.
The dimensions are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The forward voltage drop is 1.6 V, enhancing overall efficiency.
The maximum gate-source voltage limits are -25 V to +25 V.
This model uses an N-channel type, operating in enhancement mode.
Related Products
Other Products from this brand
$0.69
$0.67
-3%
New
$0.57
$0.55
-3%
New
Recently Viewed Products
$0.15
$0.14
-3%
New
$287.87
$279.23
-3%
New
$11.36
$11.02
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent