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onsemi PowerTrench N-Channel MOSFET 45 A 150 V Enhancement 8-Pin WDFN FDMS86255
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5.1mm |
| Model | FDMS86255 |
| Width | 6.25mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 45A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 25mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 113W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET operates with an enhancement mode channel providing efficient switching performance.
- Maximum power dissipation of 113 W supports high thermal loads for demanding applications.
- The device features a low on-resistance of 25 milliohms to reduce conduction losses.
- Designed for surface mounting in a compact 6.25 mm by 5.1 mm by 1.05 mm footprint.
- Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
- Typical gate charge of 45 nanocoulombs provides fast switching speeds for power control.
- Maximum gate-source voltage ratings of -20 V to +20 V allow robust gate drive flexibility.
- Forward voltage of 1.2 V and absence of automotive certification specifies general industrial usage.
Product Description
onsemi FDMS86255 is a PowerTrench® N-Channel Enhancement mode MOSFET designed for high current applications requiring up to 45 A continuous drain current and 150 V drain-source voltage. Packaged in an 8-Pin WDFN surface-mount configuration, this MOSFET delivers low conduction losses with a maximum drain-source resistance of 25 milliohms and supports a maximum power dissipation of 113 W.
The compact physical dimensions - 6.25 mm width, 5.1 mm length, and 1.05 mm height - make it suitable for densely packed electronic circuits. It operates reliably over a broad temperature range from -55°C to 150°C, ensuring durability in industrial, commercial, and consumer power management applications.
With a typical gate charge of 45 nC at 4.5 V, the FDMS86255 facilitates fast switching for efficient power conversion. The device supports gate-source voltages between -20 V and +20 V, allowing flexible gate drive voltages for enhanced control. The forward voltage is rated at 1.2 V, reflecting typical conduction characteristics.
This MOSFET is ideal for use in power management circuits, including DC-DC converters, motor drivers, switch-mode power supplies, and general electronic switching applications. The device is not automotive rated but fits well in industrial and laboratory electronics requiring reliable high-power switching.
This MOSFET operates with an enhancement channel mode enabling high efficiency switching. Low on-resistance (Rds(on)) reduces power loss in conduction states. Surface mount WDFN package enables compact PCB design and effective heat dissipation.
Wide operating temperature range ensures stable operation in extreme environments. High maximum power dissipation rating supports demanding high power circuits. Gate charge characteristics guarantee fast switching performance.
Robust gate-source voltage ratings provide flexible and safe gate control. The device is recommended for various industrial and commercial power electronics applications. Explore more semiconductor and discrete component options at EnvMart to suit your technical and industrial power management requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 45 A.
This MOSFET has a maximum drain-source voltage rating of 150 V.
The maximum drain-source resistance (Rds(on)) is 25 milliohms, which helps reduce conduction losses.
The dimensions of this model are 6.25 mm in width, 5.1 mm in length, and 1.05 mm in height.
The typical gate charge is 45 nanocoulombs at a gate-source voltage of 4.5 V.
It operates over a wide temperature range from -55°C to 150°C.
This model is packaged in an 8-Pin WDFN surface-mount configuration.
The maximum power dissipation for this MOSFET is 113 W.
The forward voltage is rated at 1.2 V.
The maximum gate-source voltage ratings are -20 V to +20 V, allowing for flexible gate drive options.
This MOSFET is suitable for power management circuits, including DC-DC converters, motor drivers, and switch-mode power supplies.
It operates with an enhancement mode channel, providing efficient switching performance.
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