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Texas Instruments NexFET N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SON Package CSD16321Q5
Specifications
| Country of Origin | India |
|---|---|
| Brand | Texas Instruments |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | CSD16321Q5 |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NexFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 3.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.1W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -8, +10V |
| Forward Voltage Vf | 0.8V |
Key Features
- High continuous drain current rating of 100 amperes.
- Drain-source voltage rating of 25 volts ensuring robust performance.
- Enhanced channel mode employing NexFET technology for efficient switching.
- Compact 8-pin SON surface mount package reducing PCB space.
- Low on-resistance of 3.8 milliohms for minimal power loss.
- Maximum power dissipation of 3.1 watts for thermal reliability.
- Wide operating temperature range from -55°C up to 150°C.
- Maximum gate-source voltage rated between -8 to +10 volts.
Product Description
Texas Instruments CSD16321Q5 NexFET N-Channel MOSFET offers high performance for power management in various industrial and electronic applications. This semiconductor device supports a maximum continuous drain current of 100 A and a maximum drain-source voltage of 25 V, making it suitable for demanding power switching tasks.
The MOSFET features an 8-pin Small Outline No-lead (SON) package designed for surface mounting, enabling circuit miniaturization and improved heat dissipation. Its low maximum drain-source resistance of 3.8 milliohms and low forward voltage drop of 0.8 V contribute to energy efficiency and reduced thermal losses.
This component utilizes enhancement mode NexFET technology which ensures enhanced switching capabilities and reliability. Operating temperature ranges from -55°C to 150°C support its use in harsh environments, while the maximum power dissipation rating of 3.1 watts ensures robust thermal handling.
Dimensions of this MOSFET are compact with a length of 6.1 mm, width of 5.1 mm, and height of 1.05 mm, making it suitable for dense electronic designs in automotive, industrial control, and power supply applications.
High continuous drain current of 100 A. Drain-source voltage rating of 25 V. NexFET enhancement mode technology. 8-Pin SON surface mount package. Low drain-source resistance of 3.8 mΩ. Maximum power dissipation 3.1 W. Operating temperature from -55°C to 150°C.
Gate-source voltage range -8 to +10 V. Forward voltage of 0.8 V. Compact dimensions for efficient PCB layout. Ideal for applications in power electronics, automotive systems, and industrial machinery requiring reliable and efficient MOSFET switching components.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 100 A.
The drain-source voltage rating for this model is 25 V.
This MOSFET comes in an 8-pin Small Outline No-lead (SON) package designed for surface mounting.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The maximum power dissipation of this model is 3.1 watts.
The low maximum drain-source resistance for this MOSFET is 3.8 milliohms.
The forward voltage of this model is 0.8 V.
The maximum gate-source voltage for this MOSFET is rated between -8 to +10 V.
The dimensions of this MOSFET are 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height.
This model utilizes NexFET enhancement mode technology for improved switching capabilities and reliability.
This MOSFET is suitable for applications in power electronics, automotive systems, and industrial machinery requiring efficient switching.
The typical gate charge for this model at Vgs is 14 nC.
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