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DiodesZetex Isolated 2 N-Channel Power MOSFET, 1.3 A, 30 V Enhancement, 6-Pin SC-88 DMN3190LDW-7

Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 2.2mm
Model DMN3190LDW-7
Width 1.35mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SC-88
Minimum Operating Temperature -55°C
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.3A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 335mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 400mW
Typical Gate Charge Qg @ Vgs 0.9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V
Transistor Configuration Isolated

Key Features

  • Features an isolated dual N-Channel transistor configuration with enhancement mode operation.
  • Surface mount type designed for high-efficiency power management in electronic circuits.
  • Maximum power dissipation of 400 mW supports reliable thermal performance.
  • Operates within a temperature range from -55°C to +150°C for durable applications.
  • Equipped with a typical gate charge of 0.9 nC at Vgs and robust gate to source voltage tolerance of ±20 V.
  • Offers low drain-source resistance of 335 mΩ to minimize power loss.
  • Manufactured to industry standards including J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and automotive standards AEC-Q101, AEC-Q100, AEC-Q200.

Product Description

DiodesZetex DMN3190LDW-7 is an isolated dual N-Channel power MOSFET designed for efficient high-frequency switching and power management applications. This device provides a maximum continuous drain current of 1.3 amperes and a maximum drain-source voltage of 30 volts, making it suitable for compact surface-mount circuit designs.

Housed in a 6-pin SC-88 surface mount package with minimal height of 1 mm, length 2.2 mm, and width 1.35 mm, the MOSFET is optimized for space-constrained electronic assemblies and ensures excellent thermal dissipation with a power rating of 400 milliwatts.

The enhancement mode transistor operates with a typical gate charge of 0.9 nanocoulombs at gate voltage, and it supports a maximum gate-source voltage range of -20 V to +20 V, facilitating robust gate control in sensitive circuits.

This MOSFET features a low on-resistance of 335 milliohms which reduces conduction losses and improves overall efficiency. The device is validated against automotive standards AEC-Q100, AEC-Q101, and AEC-Q200, ensuring reliable performance in automotive and industrial environments.

Operation temperature range spans from -55°C to +150°C, supporting a broad spectrum of industrial, automotive, and consumer electronics applications. Compliance with international standards such as J-STD-020, MIL-STD-202, RoHS, and UL 94V-0 flame retardant rating emphasizes the product's quality and safety.

Features an isolated dual N-channel configuration for enhanced performance. Compact 6-pin SC-88 surface mount package for flexible PCB design. Supports high continuous drain current of 1.3 A and voltage of 30 V. Low Rds(on) of 335 mΩ minimizes power dissipation and heat generation.

Wide temperature operation range of -55°C to +150°C ensures reliability. Automotive-grade qualifications suitable for harsh operating conditions. Compliance with multiple industrial and safety standards guarantees quality.

This DiodesZetex DMN3190LDW-7 Power MOSFET is ideal for applications in power management, automotive electronics, industrial controls, and consumer electronics, enabling efficient switching and low power loss.

Explore more power semiconductor devices and DiodesZetex products with EnvMart for comprehensive industrial and electronic component solutions.

DiodesZetex Isolated 2 N-Channel Power MOSFET, 1.3 A, 30 V Enhancement, 6-Pin SC-88 DMN3190LDW-7
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Frequently Asked Questions

The maximum continuous drain current of the DMN3190LDW-7 is 1.3 A.

This model supports a maximum drain-source voltage of 30 V.

It features a low drain-source resistance of 335 mΩ, which helps minimize power loss.

The DMN3190LDW-7 is housed in a 6-pin SC-88 surface mount package.

The typical gate charge at Vgs is 0.9 nC.

It operates within a temperature range from -55°C to +150°C.

This model complies with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.

The dimensions are 1 mm in height, 2.2 mm in length, and 1.35 mm in width.

The maximum power dissipation is 400 mW.

It features an isolated dual N-channel transistor configuration.

It meets several standards including J-STD-020, MIL-STD-202, RoHS, and UL 94V-0.

The maximum gate-source voltage is ±20 V.

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