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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | DMN3190LDW-7 |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-88 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 335mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 400mW |
| Typical Gate Charge Qg @ Vgs | 0.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
DiodesZetex DMN3190LDW-7 is an isolated dual N-Channel power MOSFET designed for efficient high-frequency switching and power management applications. This device provides a maximum continuous drain current of 1.3 amperes and a maximum drain-source voltage of 30 volts, making it suitable for compact surface-mount circuit designs.
Housed in a 6-pin SC-88 surface mount package with minimal height of 1 mm, length 2.2 mm, and width 1.35 mm, the MOSFET is optimized for space-constrained electronic assemblies and ensures excellent thermal dissipation with a power rating of 400 milliwatts.
The enhancement mode transistor operates with a typical gate charge of 0.9 nanocoulombs at gate voltage, and it supports a maximum gate-source voltage range of -20 V to +20 V, facilitating robust gate control in sensitive circuits.
This MOSFET features a low on-resistance of 335 milliohms which reduces conduction losses and improves overall efficiency. The device is validated against automotive standards AEC-Q100, AEC-Q101, and AEC-Q200, ensuring reliable performance in automotive and industrial environments.
Operation temperature range spans from -55°C to +150°C, supporting a broad spectrum of industrial, automotive, and consumer electronics applications. Compliance with international standards such as J-STD-020, MIL-STD-202, RoHS, and UL 94V-0 flame retardant rating emphasizes the product's quality and safety.
Features an isolated dual N-channel configuration for enhanced performance. Compact 6-pin SC-88 surface mount package for flexible PCB design. Supports high continuous drain current of 1.3 A and voltage of 30 V. Low Rds(on) of 335 mΩ minimizes power dissipation and heat generation.
Wide temperature operation range of -55°C to +150°C ensures reliability. Automotive-grade qualifications suitable for harsh operating conditions. Compliance with multiple industrial and safety standards guarantees quality.
This DiodesZetex DMN3190LDW-7 Power MOSFET is ideal for applications in power management, automotive electronics, industrial controls, and consumer electronics, enabling efficient switching and low power loss.
Explore more power semiconductor devices and DiodesZetex products with EnvMart for comprehensive industrial and electronic component solutions.
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