DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin SOIC DMP3085LSD-13

DiodesZetex DMP3085LSD-13 is a high-performance isolated Dual P-Channel Power MOSFET designed for efficient switching and amplification in industrial and electronic circuits. Featuring an 8-pin SOIC surface mount package, this MOSFET supports a maximum continuous drain current of 3.1 A and a maximum drain-source voltage of 30 V, making it suitable for medium power applications.

Its enhancement mode transistor configuration and isolated design ensure minimal interference with adjacent components, enhancing overall circuit stability. The low maximum drain-source resistance of 95 milliohms contributes to reduced power losses and increased energy efficiency.

With a power dissipation capacity of 1.7 W and a broad operating temperature range from -55°C to +150°C, this MOSFET is reliable for use in harsh environments often found in industrial, automotive, and power management applications.

Compact in size with dimensions of 4.95mm in length, 3.95mm width, and 1.5mm height, it facilitates high-density PCB layouts. Compliance with MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, and J-STD-020 standards ensures quality and safety for various use cases including manufacturing, automotive electronics, and power control systems.

The typical gate charge of 5.2 nC at gate-source voltage ensures quick switching and improved performance, while the maximum gate-source voltage rating from -20 V to +20 V provides design flexibility in circuit protection.

Supports up to 3.1 A continuous drain current for efficient power handling. Operates at a maximum drain-source voltage of 30 V for medium voltage applications. Enhancement mode transistor with isolated transistor configuration.

Low maximum drain-source resistance of 95 milliohms enhances performance. Compact 8-pin SOIC surface mount package with dimensions 4.95mm x 3.95mm x 1.5mm. Maximum power dissipation rated at 1.7 W for durability in circuits.

Wide operating temperature range from -55°C to +150°C ensures reliability. Complies with MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, and J-STD-020 standards. Typical gate charge of 5.2 nC at gate-to-source voltage optimizes switching efficiency.

Maximum gate-to-source voltage from -20 V to +20 V allows flexible circuit design.

This MOSFET is ideal for electronic, industrial, and automotive applications where reliable power switching and efficient heat dissipation are paramount. Its compact size and compliance standards make it suitable for modern, high-density PCB designs and demanding operational environments.

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