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DiodesZetex Isolated 2 N-Channel Power MOSFET, 580 mA, 60 V Enhancement Mode, 6-Pin SOT-26 DMN601DMK-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | DMN601DMK-7 |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-26 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, AEC-Q101, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 580mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 980mW |
| Typical Gate Charge Qg @ Vgs | 304nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- Dual N-Channel configuration for versatile power management.
- Enhancement mode channel for efficient switching performance.
- Maximum continuous drain current of 580 mA ensuring reliable operation.
- Low maximum drain-source resistance of 4 Ω reduces conduction losses.
- Typical gate charge of 304 nC at Vgs enhances switching speed.
- Wide operating temperature range from -55°C to +150°C for robust use.
- Compliance with automotive and industrial standards including AEC-Q101 and UL 94V-0.
- Designed with isolated transistor configuration suitable for reliable circuit integration.
Product Description
DiodesZetex DMN601DMK-7 Isolated 2 N-Channel Power MOSFET is an advanced semiconductor device tailored for efficient power switching in electronic circuits. Featuring a surface mount SOT-26 6-pin package, it supports a maximum continuous drain current of 580 mA and drain-source voltage rating of 60 V, making it suitable for demanding power management applications.
The enhancement mode N-channel MOSFET offers low on-resistance of 4 Ω, minimizing power dissipation and enhancing circuit efficiency. Its typical gate charge of 304 nC facilitates fast switching performance, while the device operates reliably across a wide industry temperature range from -55°C to +150°C, meeting stringent automotive and industrial requirements.
Compact physical dimensions (3.1 mm length, 1.7 mm width, 1.3 mm height) enable integration into space-constrained PCB layouts. The transistor’s isolated dual N-channel architecture improves circuit design flexibility and isolation in complex systems.
Certified to standards such as J-STD-020, MIL-STD-202, RoHS, AEC-Q101, and UL 94V-0, this MOSFET is ideal for automotive, industrial, and consumer electronics applications requiring durable and efficient power semiconductor solutions.
Dual N-Channel configuration for versatile power management. Enhancement mode channel for efficient switching performance. Maximum continuous drain current of 580 mA ensuring reliable operation. Low maximum drain-source resistance of 4 Ω reduces conduction losses.
Typical gate charge of 304 nC at Vgs enhances switching speed. Wide operating temperature range from -55°C to +150°C for robust use. Compact dimensions: Length 3.1 mm, Width 1.7 mm, Height 1.3 mm for space-saving designs.
Compliance with automotive and industrial standards including AEC-Q101 and UL 94V-0. Designed with isolated transistor configuration suitable for reliable circuit integration.
This product is widely utilized in electronic, industrial, automotive, and power supply manufacturing environments. Explore more Power MOSFETs from DiodesZetex and related semiconductor components on EnvMart for your power electronics projects and productions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 580 mA.
The maximum drain-source voltage rating is 60 V.
The typical gate charge at Vgs is 304 nC.
The dimensions are 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height.
The maximum drain-source resistance is 4 Ω.
It can operate in a temperature range from -55°C to +150°C.
This MOSFET comes in a surface mount SOT-26 package.
It complies with J-STD-020, MIL-STD-202, RoHS, AEC-Q101, and UL 94V-0 standards.
This model has 6 pins.
The transistor configuration is isolated with a dual N-channel setup.
It meets automotive standards AEC-Q200, AEC-Q101, and AEC-Q100.
The maximum power dissipation is 980 mW.
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