onsemi UniFET N-Channel MOSFET 69 A 250 V Enhancement Channel 3-Pin TO-3PN FDA69N25

onsemi FDA69N25 is a high-performance UniFET N-Channel MOSFET optimized for high voltage and current switching applications. It features a 3-pin TO-3PN package designed for through-hole mounting, enabling robustness in power electronic circuits. This device supports a maximum continuous drain current of 69 A and a maximum drain-source voltage of 250 V, allowing it to perform efficiently in demanding industrial and commercial environments.

The enhancement channel design provides superior switching performance, low on-state resistance of 41 mΩ, and high avalanche energy strength. This MOSFET includes an internal gate-source ESD diode capable of withstanding surges exceeding 2000 V HBM, protecting circuits from electrostatic discharge damage.

With a maximum power dissipation of 480 W and an operating temperature range from -55°C to 150°C, the FDA69N25 MOSFET is suitable for a wide array of industrial applications including power factor correction (PFC), flat panel display power supplies, ATX power supplies, and electronic lamp ballasts. The compact dimensions (15.8 mm length, 5 mm width, 20.1 mm height) enable easy integration into various electronic systems.

The device has a maximum gate-source voltage range from -30 V to +30 V and a forward voltage of 1.4 V, facilitating efficient control and switching. Its typical gate charge of 77 nC at the specified gate voltage supports faster switching speeds, optimizing performance in high-frequency circuits.

This MOSFET is a part of the UniFET family from onsemi, known for delivering small on-state resistance among planar MOSFETs while providing superior switching capability. The robust design and reliability make it ideal for use in industrial, laboratory, manufacturing, HVAC, and commercial electronic equipment.

Enhanced channel type for efficient switching performance. Maximum continuous drain current of 69 A suitable for high load applications. Maximum drain-source voltage rating of 250 V ensures robustness. Low on-resistance of 41 mΩ reduces conduction losses.

Gate-source voltage range supports reliable control. High power dissipation capacity of 480 W for demanding use. Wide operating temperature range from -55°C to 150°C. Compact TO-3PN 3-pin package supports through-hole mounting.

Internal ESD diode improves surge resistance up to 2000 V HBM. Typical gate charge enhances switching speed. Explore more high-performance MOSFETs and semiconductor solutions in this category available on EnvMart for industrial and electronic applications.