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onsemi 4-Element Bi-Directional ESD Protection Diode 0.36W 8-Pin DFN NUF2114MNT1G

Category ESD Protection Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.95mm
Length 2mm
Model NUF2114MNT1G
Width 2mm
Mount Type Surface
Maximum Operating Temperature 85°C
Package Type DFN
Minimum Operating Temperature -40°C
Pin Count 8
Number of Elements per Chip 4
Diode Configuration Array
Direction Type Bi-Directional
Minimum Breakdown Voltage Vbr 13.7V
Maximum Reverse Stand-off Voltage Vwm 12V
Peak Pulse Power Dissipation Pppm 0.36W
Test Current It 1mA
Maximum Reverse Leakage Current 100nA

Key Features

  • Designed for surface mount applications with an 8-Pin DFN package.
  • Provides a peak pulse power dissipation of 0.36 watts for effective ESD protection.
  • Features a minimum breakdown voltage of 13.7 volts and maximum reverse stand-off voltage of 12 volts.
  • Operates efficiently between -40°C and 85°C temperature range.
  • Incorporates four diode elements per chip configured in a bi-directional array.
  • Ensures minimal leakage current with a maximum of 100 nanoamperes.
  • Ideal for use in EMI filtering and transient voltage suppression in electronic circuits.
  • Compact size with dimensions of 2mm length, 2mm width, and 0.95mm height.

Product Description

onsemi NUF2114MNT1G is a 4-element bi-directional electrostatic discharge (ESD) protection diode designed to safeguard sensitive electronic components from voltage spikes and transient conditions common in industrial, telecommunications, consumer electronics, and automotive applications. Packaged in a compact 8-pin DFN surface mount format, this diode provides reliable ESD suppression with a peak pulse power dissipation capability of 0.36 watts.

The device features a minimum breakdown voltage of 13.7 V and a maximum reverse stand-off voltage of 12 V, supporting steady operation in circuits exposed to potentially harmful transient voltages. With ultra-low reverse leakage current of only 100 nanoamperes and a broad operating temperature range from -40°C to 85°C, it ensures durability and consistent performance in challenging electrical environments.

This bi-directional diode array integrates four diode elements per chip, allowing it to effectively protect against ESD events in multiple directions. Its compact dimensions (2mm x 2mm x 0.95mm) facilitate space-saving PCB designs, making it suitable for modern electronics manufacturing.

The NUF2114MNT1G is widely used in EMI filters and transient voltage suppressor circuits to enhance product reliability and longevity. While it does not have specific automotive certifications, it serves well in various industrial electronic protection roles.

Designed for surface mount applications with an 8-Pin DFN package. Provides a peak pulse power dissipation of 0.36 watts for effective ESD protection. Features a minimum breakdown voltage of 13.7 volts and maximum reverse stand-off voltage of 12 volts.

Operates efficiently between -40°C and 85°C temperature range. Incorporates four diode elements per chip configured in a bi-directional array. Ensures minimal leakage current with a maximum of 100 nanoamperes. Ideal for use in EMI filtering and transient voltage suppression in electronic circuits.

Compact size with dimensions of 2mm length, 2mm width, and 0.95mm height. Meets standard industrial requirements though lacks formal approvals or automotive standard certification.

Choose the onsemi NUF2114MNT1G diode for a trusted, compact ESD protection solution in industrial, consumer electronics, and communication equipment applications. Explore more semiconductor and ESD Protection Diode options in EnvMart's comprehensive catalog.

onsemi 4-Element Bi-Directional ESD Protection Diode 0.36W 8-Pin DFN NUF2114MNT1G
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Frequently Asked Questions

The NUF2114MNT1G provides a peak pulse power dissipation of 0.36 watts.

The minimum breakdown voltage for this model is 13.7 volts.

The maximum reverse stand-off voltage is 12 volts.

It operates efficiently within a temperature range of -40°C to 85°C.

This model incorporates four diode elements per chip configured in a bi-directional array.

The dimensions of this diode are 2mm in length, 2mm in width, and 0.95mm in height.

The maximum reverse leakage current is 100 nanoamperes.

This diode is designed for surface mount applications.

It is ideal for use in EMI filtering and transient voltage suppression in electronic circuits.

The diode is packaged in an 8-pin DFN format.

The test current for this diode is 1 mA.

The country of origin for this model is India.

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