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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.95mm |
| Length | 2mm |
| Model | NUF2114MNT1G |
| Width | 2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 85°C |
| Package Type | DFN |
| Minimum Operating Temperature | -40°C |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Diode Configuration | Array |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 13.7V |
| Maximum Reverse Stand-off Voltage Vwm | 12V |
| Peak Pulse Power Dissipation Pppm | 0.36W |
| Test Current It | 1mA |
| Maximum Reverse Leakage Current | 100nA |
onsemi NUF2114MNT1G is a 4-element bi-directional electrostatic discharge (ESD) protection diode designed to safeguard sensitive electronic components from voltage spikes and transient conditions common in industrial, telecommunications, consumer electronics, and automotive applications. Packaged in a compact 8-pin DFN surface mount format, this diode provides reliable ESD suppression with a peak pulse power dissipation capability of 0.36 watts.
The device features a minimum breakdown voltage of 13.7 V and a maximum reverse stand-off voltage of 12 V, supporting steady operation in circuits exposed to potentially harmful transient voltages. With ultra-low reverse leakage current of only 100 nanoamperes and a broad operating temperature range from -40°C to 85°C, it ensures durability and consistent performance in challenging electrical environments.
This bi-directional diode array integrates four diode elements per chip, allowing it to effectively protect against ESD events in multiple directions. Its compact dimensions (2mm x 2mm x 0.95mm) facilitate space-saving PCB designs, making it suitable for modern electronics manufacturing.
The NUF2114MNT1G is widely used in EMI filters and transient voltage suppressor circuits to enhance product reliability and longevity. While it does not have specific automotive certifications, it serves well in various industrial electronic protection roles.
Designed for surface mount applications with an 8-Pin DFN package. Provides a peak pulse power dissipation of 0.36 watts for effective ESD protection. Features a minimum breakdown voltage of 13.7 volts and maximum reverse stand-off voltage of 12 volts.
Operates efficiently between -40°C and 85°C temperature range. Incorporates four diode elements per chip configured in a bi-directional array. Ensures minimal leakage current with a maximum of 100 nanoamperes. Ideal for use in EMI filtering and transient voltage suppression in electronic circuits.
Compact size with dimensions of 2mm length, 2mm width, and 0.95mm height. Meets standard industrial requirements though lacks formal approvals or automotive standard certification.
Choose the onsemi NUF2114MNT1G diode for a trusted, compact ESD protection solution in industrial, consumer electronics, and communication equipment applications. Explore more semiconductor and ESD Protection Diode options in EnvMart's comprehensive catalog.
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