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STMicroelectronics N-Channel IGBT Insulated Gate Bipolar Transistor 80A 650V 3-Pin TO-247 Through Hole STGW40H65FB
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STGW40H65FB |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | H |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 283W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Designed for high efficiency and fast switching applications.
- Features maximum power dissipation of 283W for robust operation.
- Supports operating temperatures ranging from -55°C to 175°C.
- High maximum gate-emitter voltage of ±20V for stable gate control.
- Suitable for power semiconductor applications requiring N-channel IGBTs.
- Complies with RoHS standards ensuring environmental compliance.
Product Description
STMicroelectronics STGW40H65FB is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications with high efficiency and fast switching capabilities. It has a maximum continuous collector current of 80A and a collector-emitter voltage rating of 650V, delivered in a durable 3-Pin TO-247 through hole package.
The transistor offers robust power handling with a maximum power dissipation of 283W, making it suitable for demanding industrial and electronic applications. It features a maximum gate-emitter voltage of ±20V to ensure stable and reliable gate control during operation.
Operational temperature range extends from -55°C up to 175°C, supporting use in harsh industrial environments. The transistor's compact dimensions (20.15mm height, 15.75mm length, 5.15mm width) and through hole mount type facilitate versatile integration into various circuit designs.
This IGBT complies with RoHS regulations, ensuring it meets environmental standards. It is ideal for applications in power electronics, motor drives, inverters, and other systems requiring efficient high-current switching.
Designed for high efficiency and fast switching operations. High maximum collector current of 80A for power-intensive applications. Wide operational temperature range from -55°C to 175°C. Package type: 3-Pin TO-247 through hole for secure mounting.
Complies with RoHS environmental standards.
STMicroelectronics products provide reliable semiconductor solutions for industrial, manufacturing, electrical, and power systems. Browse EnvMart’s extensive STMicroelectronics range for compatible products and related components.
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Frequently Asked Questions
The maximum continuous collector current for this model is 80A, making it suitable for power-intensive applications.
This IGBT has a collector-emitter voltage rating of 650V, allowing it to handle high voltage applications effectively.
The maximum power dissipation for this transistor is 283W, which supports robust operation in demanding applications.
The operational temperature range extends from -55°C to 175°C, enabling use in harsh industrial environments.
It comes in a 3-Pin TO-247 through hole package, facilitating secure mounting in various circuit designs.
The maximum gate-emitter voltage is ±20V, ensuring stable and reliable gate control during operation.
The dimensions are 20.15mm in height, 15.75mm in length, and 5.15mm in width.
Yes, it complies with RoHS standards, ensuring it meets environmental compliance requirements.
This model is ideal for power electronics, motor drives, inverters, and other systems requiring efficient high-current switching.
The maximum collector-emitter saturation voltage for this IGBT is 2.3V.
This transistor features an N-channel type, which is commonly used for high-efficiency applications.
The country of origin for this model is India.
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