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onsemi Type P-Channel Power MOSFET, 9 A Current, 30 V Voltage, Surface Mount, 8-Pin, Enhancement Mode ECH8310
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.9mm |
| Length | 2.9mm |
| Model | ECH8310 |
| Width | 2.3mm |
| Mount Type | Surface |
| Series | ECH8310 |
| Maximum Operating Temperature | 150°C |
| Package Type | ECH |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 17mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The MOSFET operates with a maximum power dissipation of 1.5 W.
- It features a low maximum drain-source resistance of 17 mΩ for efficient power handling.
- The device has an 8-pin ECH package suitable for compact surface mounting.
- Operating temperature range spans from -55°C to 150°C, enhancing reliability in diverse applications.
- The typical gate charge is 28 nC, providing efficient switching performance.
- Maximum gate-source voltage tolerance is ±20 V ensuring robust gate control.
- The device dimensions are compact with length 2.9 mm, width 2.3 mm and height 0.9 mm.
- Forward voltage is rated at -1.2 V indicating efficient conduction when active.
Product Description
onsemi ECH8310 is a Type P-Channel Power MOSFET designed for applications requiring reliable switching and power control in the 9 A current and 30 V voltage range. Its surface mount 8-pin ECH package supports compact electronic assemblies.
This enhancement mode MOSFET offers a maximum drain-source resistance of 17 mΩ enabling efficient conduction and power dissipation up to 1.5 watts, making it suited for efficient power management in industrial, commercial, and electronic component manufacturing.
The device's robust operation across a temperature range of -55°C to +150°C ensures suitability for environments subjected to wide thermal variations. Typical gate charge of 28 nC and maximum gate-source voltage of ±20 V provide effective and reliable switching responses.
The compact footprint with lengths and widths under 3 mm facilitates high-density PCB layouts in automotive, telecommunication, and consumer electronics systems. It is not certified for automotive standard but meets general semiconductor reliability.
The MOSFET operates with a maximum power dissipation of 1.5 W. Low maximum drain-source resistance of 17 mΩ for effective power efficiency. 8-pin surface mount package allowing compact design integration. Wide operating temperature from -55°C to 150°C for reliability under harsh conditions.
Typical gate charge is 28 nC for reliable gate drive performance. Steps to provide ±20 V gate-source voltage tolerance ensure stable control. Compact device dimensions enhance PCB space optimization. Forward voltage of -1.2 V supports effective conduction.
This device is a well-suited choice for electronic circuit designers aiming for efficient, reliable power MOSFETs in discrete semiconductor applications including power supplies and driver circuits. Browse other Power MOSFETs and electronic components on EnvMart for enhanced technical and industrial selections.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 A.
The maximum drain-source voltage rating for this power MOSFET is 30 V.
This model can dissipate a maximum power of 1.5 W.
The maximum drain-source resistance of this unit is 17 mΩ.
The typical gate charge for this power MOSFET is 28 nC.
The operating temperature range spans from -55°C to 150°C.
The dimensions of this model are 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height.
This MOSFET uses an 8-pin ECH surface mount package.
The maximum gate-source voltage tolerance for this model is ±20 V.
The forward voltage rating is -1.2 V.
This model is a Type P-Channel power MOSFET.
The ECH8310 is manufactured in India.
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