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onsemi N-Channel Power MOSFET, 20 A Continuous Drain Current, 60 V Drain-Source Voltage, Enhancement Mode NTD5867NLT4G

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onsemi N-Channel Power MOSFET, 20 A Continuous Drain Current, 60 V Drain-Source Voltage, Enhancement Mode NTD5867NLT4G

Name: onsemi N-Channel Power MOSFET, 20 A Continuous Drain Current, 60 V Drain-Source Voltage, Enhancement Mode NTD5867NLT4G
Brand: onsemi
SKU: 358565
Price: 0.85 USD
Availability: InStock

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Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.38mm
Length	6.73mm
Model	NTD5867NLT4G
Width	6.22mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
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RS Stock No.	719-2901Brand: onsemiManufacturers Part No.: NTD5867NLT4G
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	50mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	36W
Typical Gate Charge Qg @ Vgs	15nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

Designed for surface mount applications with a compact 3-pin TO-252 package.
Features an enhancement mode with a maximum drain-source resistance of 50 milliohms.
Supports a maximum power dissipation of 36 watts for robust performance.
Operates reliably across a temperature range of -55°C to 150°C.
Gate charge typical value of 15 nanocoulombs ensures efficient switching.
Withstands gate-source voltages up to ±20 volts for protection.
Ideal for power management and switching applications in electronic devices.

Product Description

The onsemi NTD5867NLT4G is a high-performance N-Channel Power MOSFET designed for efficient power switching and management in electronic circuits. It features a maximum continuous drain current of 20 A and a maximum drain-source voltage of 60 V, making it suitable for various industrial and consumer electronic applications. Its enhancement-mode channel operation with a low Rds(on) of 50 milliohms provides improved efficiency and reduced power losses.

Packaged in a compact TO-252 surface-mount package with 3 pins, this MOSFET facilitates easy PCB integration and thermal management. The device supports a maximum power dissipation rating of 36 W and is designed to operate reliably under extreme temperature conditions ranging from -55°C to +150°C.

The typical gate charge of 15 nC at a gate-source voltage of 15 V allows for fast switching speeds and efficient control in circuits requiring rapid response. Its tolerance to gate-source voltages up to ±20 V protects the device in demanding electrical environments.

With precise dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height, the onsemi NTD5867NLT4G is optimized for compact electronic designs. This MOSFET is widely used in power management, DC-DC converters, motor controllers, and other industrial electronics requiring reliable and efficient switching components.

Designed for surface mount applications with a compact 3-pin TO-252 package. Features an enhancement mode with a maximum drain-source resistance of 50 milliohms. Supports a maximum power dissipation of 36 watts for robust performance.

Operates reliably across a temperature range of -55°C to 150°C. Gate charge typical value of 15 nanocoulombs ensures efficient switching. Withstands gate-source voltages up to ±20 volts for protection. Compact dimensions ideal for electronic circuit integration: 6.73 mm length, 6.22 mm width, 2.38 mm height.

Ideal for power management and switching applications in electronic devices. Suitable for industrial, manufacturing, electronic design, and commercial power electronics applications. Explore wide ranges of Power MOSFETs and semiconductors at EnvMart.