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onsemi P-Channel Power MOSFET 400 mA, 20 V, Enhancement Mode, 3-Pin SOT-23 Package NTR0202PL
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NTR0202PL |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | NTR0202PL |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 400mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 225mW |
| Typical Gate Charge Qg @ Vgs | 2.18nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1V |
Key Features
- Enhancement mode type P-channel MOSFET for efficient switching applications.
- Maximum continuous drain current of 400 mA suitable for low power circuits.
- Low on-resistance of 550 milliohms ensuring minimal power dissipation.
- Surface mount SOT-23 package with 3 pins for compact PCB layouts.
- Wide operating temperature range from -55°C to 150°C for reliable performance.
- Maximum power dissipation of 225 mW ideal for small signal handling.
- Typical gate charge of 2.18 nC at Vgs, enabling fast switching speeds.
- Maximum gate-source voltage of ±20 V for robust gate control.
Product Description
The onsemi NTR0202PL is a P-Channel power MOSFET designed for low power switching circuit applications and optimized for surface-mount technology (SMT). It features an enhancement mode channel and supports a maximum continuous drain current of 400 mA, making it suitable for compact electronic designs requiring efficient power control.
This MOSFET’s maximum drain-source voltage rating of 20 V allows safe operation in low-voltage circuits, while its low on-resistance of 550 milliohms contributes to reduced power losses and improved energy efficiency. The device's typical gate charge of 2.18 nC at the gate-source voltage ensures fast switching, ideal for high-speed electronic devices.
The package type is SOT-23, a small outline transistor package with 3 pins, enabling high-density PCB mounting. Its physical dimensions (length 3.04 mm, width 1.4 mm, height 1.01 mm) allow it to fit into constrained spaces in modern electronic assemblies.
Operating temperature range from -55°C to 150°C makes it suitable for demanding environments including automotive electronics and industrial applications where thermal stress is a concern. Though it lacks specific automotive certifications, this MOSFET delivers reliable performance under wide temperature extremes.
With a maximum power dissipation of 225 mW, the NTR0202PL is tailored for small signal power switching, amplifiers, and driver stages. Its robust max gate-source voltage ratings of ±20 V protect gate terminals during switching events, ensuring longevity of the device.
Enhancement mode type P-channel MOSFET. Max continuous drain current: 400 mA. Max drain-source voltage: 20 V. SOT-23 3-pin surface mount package. On-resistance: 550 milliohms. Operating temperature range: -55°C to 150°C.
Gate charge: 2.18 nC typical. Power dissipation: 225 mW maximum. Forward voltage typical: -1 V. Compact dimensions for SMT integration.
This P-Channel MOSFET is ideal for use in low voltage power switching, portable electronics, and industrial control circuitry. Its small package and solid electrical characteristics enable integration into compact, energy-efficient designs.
Explore the Electronics & Electricals category for related semiconductor components and MOSFET devices at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 400 mA, making it suitable for low power circuits.
The maximum drain-source voltage rating is 20 V, allowing safe operation in low-voltage circuits.
It uses a SOT-23 package type, which is a small outline transistor package with 3 pins for compact PCB layouts.
The on-resistance is 550 milliohms, which helps in minimizing power dissipation during operation.
The typical gate charge at gate-source voltage is 2.18 nC, enabling fast switching speeds.
The operating temperature range is from -55°C to 150°C, suitable for demanding environments.
The maximum power dissipation is 225 mW, ideal for small signal handling applications.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.
The typical forward voltage is -1 V, which is relevant for its operation in circuits.
It has a P-channel type, designed for enhancement mode operation.
The maximum gate-source voltage rating is ±20 V, providing robust gate control during operation.
This model is suitable for low voltage power switching, portable electronics, and industrial control circuitry.
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