onsemi P-Channel MOSFET 1.5 A 8 V Enhancement 3-Pin SOT-323 NTS2101P

Brand onsemi presents the NTS2101P, a P-Channel MOSFET designed for discrete semiconductor applications requiring efficient switching and surface mounting.

This enhancement mode MOSFET delivers a maximum continuous drain current of 1.5 A with a maximum drain-source voltage of 8 V. Packaged in a compact 3-pin SOT-323 form factor, it is ideal for space-limited PCB layouts.

The device supports a broad operating temperature range from -55°C to 150°C, making it suitable for industrial, consumer electronics, and power management uses. With a maximum power dissipation of 330mW and a low drain-source resistance of 210 milliohms, the NTS2101P ensures minimal power loss and efficient thermal characteristics.

The typical gate charge of 6.4nC enables rapid switching speeds, supported by a robust gate-source voltage tolerance ranging from -8 V to +8 V. Physical dimensions of 2.2 mm length, 1.35 mm width, and 900 micrometers height facilitate easy integration into multi-layer PCBs.

The MOSFET's enhancement mode channel enables precise power control in electronic circuits. Compact SOT-323 packaging simplifies assembly and reduces circuit board footprint. Designed for surface mount technology (SMT), ideal for automated assembly lines.

Wide temperature range capability supports demanding industrial and commercial applications. Low forward voltage drop ensures energy-efficient operation in transistor switching roles. Typical applications include power management, load switching, and signal amplification.

Absence of automotive certification is noted, but the device excels in general semiconductor roles. Manufactured to stringent quality standards by onsemi to ensure reliable performance. Package includes one MOSFET transistor with three pins for straightforward mounting.

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