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onsemi P-Channel Enhancement MOSFET, 20 V, 1.37 A Continuous Drain Current, 3-Pin SC-70 Package NTS4101PT1G

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onsemi P-Channel Enhancement MOSFET, 20 V, 1.37 A Continuous Drain Current, 3-Pin SC-70 Package NTS4101PT1G

Name: onsemi P-Channel Enhancement MOSFET, 20 V, 1.37 A Continuous Drain Current, 3-Pin SC-70 Package NTS4101PT1G
Brand: onsemi
SKU: 315021
Price: 0.1 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	900μm
Length	2.2mm
Model	NTS4101PT1G
Width	1.35mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	1.37A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	160mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	329mW
Typical Gate Charge Qg @ Vgs	6.4nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	-1.2V

Key Features

Designed for surface mount applications with SC-70 package.
Maximum drain-source voltage of 20 V supports low voltage switching.
Continuous drain current rating of 1.37 A ensures reliable current handling.
Low maximum drain-source resistance of 160 mΩ reduces conduction losses.
Enhancement mode channel operation for efficient switching performance.
Typical gate charge of 6.4 nC at Vgs supports fast switching speeds.
Wide operating temperature range from -55°C to 150°C for diverse environments.
Compact package dimensions with 2.2 mm length and 1.35 mm width.

Product Description

onsemi NTS4101PT1G is a P-Channel Enhancement Mode MOSFET designed for surface mount applications requiring efficient low voltage switching and compact form factor. It features a maximum drain-source voltage of 20 V and can handle a continuous drain current of 1.37 A, making it suitable for power management in electronic devices and circuits.

The MOSFET is housed in a 3-pin SC-70 package, providing easy surface mounting and compact dimensions of 2.2 mm length, 1.35 mm width, and 900 μm height. This allows for high-density PCB layouts in automotive, industrial, and consumer electronics applications.

With a low maximum drain-source resistance of 160 mΩ, the NTS4101PT1G reduces conduction losses, improving power efficiency. Its gate charge of 6.4 nC at typical gate-source voltage supports fast switching speeds for power conversion and switching regulator circuits. The device also features a maximum gate-source voltage range of -8 V to +8 V and a forward voltage of -1.2 V.

The MOSFET operates reliably across a broad temperature range from -55°C to 150°C, suitable for demanding environments including automotive and industrial use. It offers an enhancement channel mode operation ideal for switching and amplification tasks in discrete semiconductor circuits.

Surface mount SC-70 3-pin package facilitates compact PCB design. Maximum continuous drain current of 1.37 A for power handling. Drain-source voltage rating of 20 V supports low voltage circuits. Low Rds(on) of 160 mΩ reduces power losses.

Enhancement type channel for efficient switching behavior. Typical gate charge of 6.4 nC enables fast switching speed. Wide operating temperature from -55°C to 150°C ensures reliability. Compact size dimensions: 2.2 mm length, 1.35 mm width, 900 μm height.

This P-Channel MOSFET is ideal for industrial, automotive, and consumer electronic applications requiring efficient power switching and management. Its small footprint and reliable operating parameters make it a versatile component for semiconductor discrete device selections.

Explore our wide range of discrete semiconductors and MOSFETs at EnvMart for your electronic component needs.