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STMicroelectronics MDmesh N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220 STP26NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP26NM60N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 165mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- This N-Channel MOSFET offers a maximum continuous drain current of 20 A.
- The device operates at a maximum drain-source voltage of 600 V.
- It features a maximum power dissipation of 140 W suitable for demanding applications.
- The gate charge is typically 60 nC at Vgs, enabling efficient switching performance.
- The MOSFET has a low maximum drain-source resistance of 165 mΩ.
- Operating temperatures range from -55°C to 150°C, ideal for industrial environments.
- The device includes a forward voltage of 1.5 V and a maximum gate-source voltage of ±25 V.
- Compact dimensions with length 10.4 mm, width 4.6 mm, and height 15.75 mm facilitate space-saving designs.
Product Description
STMicroelectronics STP26NM60N is an MDmesh N-Channel Enhancement MOSFET designed for high-voltage and high-current switching applications. It supports a maximum continuous drain current of 20 A and a drain-source voltage rating of 600 V, making it suitable for power electronics, motor control, and industrial automation systems.
Featuring a TO-220 package with three pins, the device is intended for through-hole mounting on PCB assemblies, offering ease of installation and robust mechanical support. This MOSFET has a very low on-resistance of 165 mΩ, which reduces power losses during conduction, improving efficiency in power conversion.
Its robust thermal and electrical specifications, including a maximum power dissipation of 140 W and an operating temperature range from -55°C to 150°C, allow the MOSFET to operate reliably in harsh industrial and automotive environments. The typical gate charge of 60 nC facilitates fast switching, reducing switching losses and electromagnetic interference in circuits.
The device’s forward voltage is specified at 1.5 V and it maintains a gate-source voltage tolerance of -25 V to +25 V, ensuring stable operation under varying control voltages. Its compact form factor (15.75 mm height, 10.4 mm length, 4.6 mm width) enables integration into space-constrained designs.
This MOSFET is ideal for use in power supplies, motor drives, and load switching in industrial, automotive, and consumer electronics applications. It belongs to STMicroelectronics’ reliable MDmesh series renowned for high electrical performance and endurance.
Suitable for use in high power switching, voltage regulation, and power management circuits. Optimized for through-hole PCB assembly with TO-220 package. Thermally efficient design allows stable operation at high ambient temperatures.
Investing in STMicroelectronics MDmesh N-Channel MOSFET STP26NM60N offers durability and efficiency improvements in your power electronics solutions, backed by ST’s trusted semiconductor expertise. Explore more products in the MOSFET category on EnvMart to complement your project needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 20 A.
It operates at a maximum drain-source voltage of 600 V.
The maximum power dissipation is 140 W, suitable for demanding applications.
The typical gate charge at Vgs is 60 nC, enabling efficient switching performance.
The maximum drain-source resistance is 165 mΩ, which helps reduce power losses during conduction.
It can operate within a temperature range of -55°C to 150°C.
This model uses a TO-220 package type, designed for through-hole mounting.
The forward voltage is specified at 1.5 V.
The maximum gate-source voltage tolerance is ±25 V.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 15.75 mm in height.
It is suitable for power electronics, motor control, and industrial automation systems.
The channel type of this MOSFET is N-channel, designed for enhancement mode operation.
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