onsemi PowerTrench N-Channel MOSFET, 18 A Continuous Drain Current, 100 V Drain Source Voltage, Enhancement Mode FDMC86102L

onsemi FDMC86102L PowerTrench N-Channel MOSFET is a high-performance semiconductor device engineered for power switching and amplification. It features a continuous drain current of 18 Amperes and a drain-source voltage rating of 100 Volts, suitable for medium-power circuit applications.

This MOSFET uses enhancement mode operation in an N-channel configuration and comes in a compact 8-pin Power 33 surface mount package, facilitating efficient PCB integration. Its low drain-source resistance of 39 milliohms minimizes conduction losses, improving overall energy efficiency in electronic circuits.

The device supports a wide operating temperature range from -55°C to 150°C, ensuring dependable operation in diverse environments including industrial and automotive electronics. With a typical gate charge of 15 nC at the gate-source voltage, it offers swift switching capabilities important for power converters and motor control systems.

Additional features include a maximum power dissipation of 41 Watts, allowing the device to handle significant electrical loads, and a forward voltage of 1.2 V. Its robust maximum gate-source voltage of ±20 V protects the gate terminal against voltage spikes, extending device life.

Physically, the MOSFET measures approximately 3.3 mm in length and width with a height of 750 micrometers, making it suitable for compact electronic assemblies. Although it carries no specific automotive certifications, it fits well in industrial, telecommunications, automotive, and consumer electronics applications requiring reliable power management.

Enhancement mode N-channel MOSFET with PowerTrench technology. Maximum continuous drain current of 18 Amperes for robust performance. Drain source voltage rating up to 100 Volts ensuring high voltage tolerance. Compact 8-pin Power 33 surface mount package for flexible PCB layout.

Low maximum drain-source resistance of 39 milliohms for reduced conduction loss. Capable of maximum power dissipation of 41 Watts for thermal stability. Wide operating temperature range from -55°C to 150°C for reliability.

Typical gate charge of 15 nanoCoulombs at Vgs enhancing fast switching. Maximum gate-source voltage rating ±20 Volts safeguarding gate integrity. Device dimensions approximately 3.3 mm length and width with 750 μm height.

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