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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 800 V 9 A 40 W TO-220 STP10NK80ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP10NK80ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Offers 40 W maximum power dissipation for effective thermal management.
- Features low maximum drain-source resistance of 900 mΩ for efficient conduction.
- Supports wide gate voltage range of -30 V to +30 V for flexible switching.
- Typical gate charge is 72 nC ensuring fast switching speeds.
- Operating temperature range from -55°C to 150°C for reliable performance in harsh environments.
- Utilizes MDmesh SuperMESH technology to enhance efficiency and ruggedness.
- Through-hole mount type with 3-pin configuration for easy PCB integration.
- Compact physical dimensions of 10.4 mm length, 9.3 mm height, and 4.6 mm width.
Product Description
STMicroelectronics model STP10NK80ZFP is a high-performance MDmesh SuperMESH N-Channel MOSFET designed for power electronic applications requiring robust 800 V voltage and 9 A current capability. Constructed in a TO-220 3-pin through-hole package, it supports enhancement mode switching and features a maximum power dissipation of 40 W. This MOSFET is engineered to deliver low conduction losses with a maximum drain-source resistance of 900 mΩ, enabling efficient switching in power supplies, motor controls, and industrial drives.
The device operates within a broad temperature range from -55°C up to 150°C, suitable for demanding industrial, automotive, and HVAC environments. It has a maximum gate-source voltage rating of ±30 V and a typical gate charge of 72 nC, which contributes to fast switching speeds and reduced switching losses.
Physical dimensions are compact with a length of 10.4 mm, height 9.3 mm, and width 4.6 mm, allowing easy accommodation on printed circuit boards. The TO-220 package offers simplified heat dissipation and mechanical robustness.
Applications include power conversion, motor drives, and other discrete semiconductor roles in electronics manufacturing sectors. It does not hold specific certifications but is built to meet rigorous industrial standards as part of the STMicroelectronics MDmesh SuperMESH family.
Offers 40 W maximum power dissipation for effective thermal management. Features low maximum drain-source resistance of 900 mΩ for efficient conduction. Supports wide gate voltage range of -30 V to +30 V for flexible switching.
Typical gate charge is 72 nC ensuring fast switching speeds. Operating temperature range from -55°C to 150°C for reliable performance in harsh environments. Utilizes MDmesh SuperMESH technology to enhance efficiency and ruggedness.
Through-hole mount type with 3-pin configuration for easy PCB integration. Compact physical dimensions of 10.4 mm length, 9.3 mm height, and 4.6 mm width. Explore more Power MOSFETs and discrete semiconductor components at EnvMart for reliable industrial electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for the STP10NK80ZFP is 9 A.
This model has a maximum drain-source voltage rating of 800 V.
It offers a maximum power dissipation of 40 W.
The maximum drain-source resistance is 900 mΩ, which contributes to efficient conduction.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
The STP10NK80ZFP is housed in a TO-220 package, which allows for through-hole mounting.
The typical gate charge is 72 nC, which facilitates fast switching speeds.
It supports a wide gate-source voltage range of -30 V to +30 V.
This MOSFET has a 3-pin configuration for easy integration into printed circuit boards.
It features an N-channel design, which is suitable for enhancement mode switching.
The dimensions are 10.4 mm in length, 9.3 mm in height, and 4.6 mm in width.
This MOSFET is suitable for power conversion, motor drives, and other discrete semiconductor applications in electronics manufacturing.
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