STMicroelectronics N-Channel IGBT 7 A 600 V 3-Pin TO-220FP Through Hole STGF7NB60SL

STMicroelectronics STGF7NB60SL is a N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring high efficiency and fast switching capabilities. This device supports a continuous collector current of 7 A and can block voltages up to 600 V, making it suitable for a variety of medium power applications. It is housed in a durable 3-pin TO-220FP package with through-hole mounting, facilitating straightforward integration into printed circuit boards.

The IGBT combines the advantages of MOSFET gate-drive characteristics with the low saturation voltage and high current handling of bipolar transistors, enabling efficient switching and power control in industrial, power management, automotive, and electronic systems. The device operates reliably across a wide temperature range from -55°C to 150°C, ensuring resilience in demanding environments.

Key electrical parameters include a maximum collector-emitter saturation voltage of 1.6 V and maximum gate-emitter voltage of 20 V. This product complies with RoHS directives, ensuring it meets environmental safety standards.

The compact dimensions (length 10.4 mm, width 4.6 mm, height 16.4 mm) and standard 3-pin configuration facilitate integration in power control circuits and drive modules. The STGF7NB60SL is part of the Powermesh series, recognized for robust and reliable semiconductor components.

This IGBT is suitable for applications in industrial automation, power conversion, motor drives, and other electronic equipment requiring efficient high-voltage switching. It offers a balance of efficiency, reliability, and size for modern power electronics engineers and designers.

This IGBT features a maximum continuous collector current of 7 A. It supports a maximum collector-emitter voltage of 600 V for high voltage operation. The device exhibits a maximum power dissipation of 25 W, suitable for moderate power applications.

It is constructed in a TO-220FP package type with a through-hole mount for easy PCB integration. The IGBT operates over a wide temperature range from -55°C to 150°C. It has a maximum collector-emitter saturation voltage of 1.6 V ensuring efficient switching performance.

Maximum gate-emitter voltage is rated at 20 V for safe gate control. The device has 3 pins and a switching speed of 1 MHz for rapid switching. Complies with RoHS standards ensuring environmental compliance. Ideal for industrial, power management, and electronic applications requiring reliable high voltage switching.

Explore more power semiconductor devices and electronic components in the Electronics & Electricals category at EnvMart.