Nexperia Silicon Junction Switching Diode Isolated 215 mA 75 V 4-Pin SOT-143 BAS28,215

The Nexperia BAS28,215 is a silicon junction switching diode designed for high-density, low leakage applications requiring fast switching. This diode features an isolated diode configuration with a maximum forward current of 215 mA and a maximum peak reverse repetitive voltage of 75 V, making it ideal for various electronic circuits including signal processing and protection systems.

Housed in a 4-pin SOT-143 surface mount package, the diode measures 3 mm in length, 1.4 mm in width, and 1 mm in height, enabling compact PCB layouts and automated assembly processes. It supports operation in ambient temperatures ranging from -65°C to +150°C, ensuring durability under harsh environmental conditions.

The BAS28,215 exhibits a low forward voltage drop of 1.25 V and a swift peak reverse recovery time of 4 ns, attributes crucial for high-frequency switching circuits. With a maximum power dissipation of 250 mW, the diode reliably manages heat generation during operation.

This diode is suitable for use in industrial electronics, telecommunications, and consumer electrical devices where switching diodes of small form factors and robust electrical characteristics are required. China is the country of origin for this component.

Supports customized high density circuit designs with low leakage. Low capacitance and high voltage tolerance facilitate versatile applications. Compact 4-pin SOT-143 surface mount package for automated production. Wide operating temperature range from -65°C to 150°C.

Fast switching speeds with 4 ns peak reverse recovery time. Maximum forward current of 215 mA and power dissipation of 250 mW. Typical forward voltage of 1.25 V ensures efficient conduction. Explore more high-quality Switching Diodes and semiconductor components in the Electronics & Electricals category at EnvMart for your industrial and laboratory applications.