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Infineon Dual N Channel Normal Level Enhancement Mode MOSFET, 16 A, 100 V, 8-Pin SuperSO8 IPG16N10S461ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPG16N10S461ATMA1 |
| Mount Type | Surface Mount |
| Series | IPG16N10S4-61 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, AEC Q101 |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 100V |
| Channel Mode | Dual N |
| Maximum Power Dissipation Pd | 29W |
| Typical Gate Charge Qg @ Vgs | 5.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Dual N Channel Normal Level Enhancement Mode |
Key Features
- This MOSFET features dual N channel configuration optimized for normal level enhancement mode operation.
- Maximum continuous drain current of 16 amperes ensures robust performance.
- Rated for maximum drain-source voltage of 100 volts for high voltage applications.
- Low typical gate charge of 5.4 nC at standard gate voltage supports efficient switching.
- Maximum power dissipation up to 29 watts allows for effective heat management.
- Operation across a temperature range from -55°C to 175°C suits demanding industrial environments.
- Maximum gate-source voltage limited to 20 V to protect device integrity.
- Surface mount package type SuperSO8 sized 5 x 6 mm enables compact PCB designs.
Product Description
Infineon IPG16N10S461ATMA1 is a sophisticated dual N channel normal level enhancement mode MOSFET designed for industrial and automotive applications. This device supports continuous drain currents up to 16 A and can withstand drain-source voltages up to 100 V, making it suitable for a wide range of power electronic circuits.
The MOSFET is housed in a surface mount SuperSO8 package measuring 5 x 6 mm, featuring 8 pins for easy integration into compact circuit boards. Its typical gate charge of 5.4 nC ensures efficient switching performance, reducing switching losses in high-frequency applications.
With maximum power dissipation of 29 W and an operating temperature range from -55°C to 175°C, the device is engineered for reliable operation under harsh environmental conditions. The maximum gate-source voltage rating of 20 V provides protection and stability in operation.
Infineon’s IPG16N10S461ATMA1 complies with RoHS regulations and meets the stringent AEC-Q101 automotive requirements, guaranteeing high quality and reliability. It is 100% avalanche tested to enhance ruggedness particularly important for automotive and industrial power applications.
This MOSFET is ideal for power management systems, automotive electronics, DC-DC converters, and motor control applications. The device’s robust thermal and electrical characteristics ensure high performance and longevity in demanding environments.
This MOSFET features dual N channel configuration optimized for normal level enhancement mode operation. Maximum continuous drain current of 16 amperes ensures robust performance. Rated for maximum drain-source voltage of 100 volts for high voltage applications.
Low typical gate charge of 5.4 nC at standard gate voltage supports efficient switching. Maximum power dissipation up to 29 watts allows for effective heat management. Operation across a temperature range from -55°C to 175°C suits demanding industrial environments.
Maximum gate-source voltage limited to 20 V to protect device integrity. Surface mount package type SuperSO8 sized 5 x 6 mm enables compact PCB designs. Fully compliant with RoHS and AEC-Q101 automotive standards, ensuring reliability and environmental safety.
100% avalanche tested for enhanced ruggedness and durability in switching applications. Explore more products in the MOSFET category at EnvMart for cutting-edge electronic components tailored for industrial and automotive sectors.
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Frequently Asked Questions
The maximum continuous drain current of this model is 16 amperes.
It is rated for a maximum drain-source voltage of 100 volts.
The typical gate charge is 5.4 nC.
The maximum power dissipation is up to 29 watts.
It operates across a temperature range from -55°C to 175°C.
The device is housed in a SuperSO8 package measuring 5 x 6 mm.
This model features 8 pins for integration into circuit boards.
It complies with the AEC-Q101 automotive standard.
It features a dual N channel configuration optimized for normal level enhancement mode operation.
This MOSFET is compliant with RoHS and AEC-Q101 standards.
The maximum gate-source voltage is limited to 20 volts.
It is commonly used in power management systems, automotive electronics, DC-DC converters, and motor control applications.
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