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Infineon IQE N-Channel MOSFET 253 A 30 V 8-Pin PQFN IQE006NE2LM5CGATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 3.3mm
Model IQE006NE2LM5CGATMA1
Mount Type Surface
Series IQE
Maximum Operating Temperature 175°C
Package Type PQFN
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 253A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 1.2mΩ
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 730mV

Key Features

  • This MOSFET features a maximum power dissipation of 81 W for efficient thermal management.
  • Low drain-source resistance of 1.2 milliohms ensures minimal conduction loss.
  • Typical gate charge of 80 nC enables fast switching performance.
  • Operates reliably between -55°C minimum and 175°C maximum temperatures.
  • Compliant with RoHS and meets the automotive standard AEC-Q101.
  • Measures 3.3 mm in length with surface mount design for compact PCB integration.
  • Forward voltage drop of 730 mV supports efficient power handling.
  • Maximum gate-source voltage rating of 20 V protects against gate damage.

Product Description

The Infineon IQE006NE2LM5CGATMA1 is an advanced N-Channel MOSFET designed for high-power electronic applications. It supports a maximum continuous drain current of 253 A and a drain-source voltage of 30 V, housed in a compact 8-pin PQFN surface mount package, making it suitable for space-constrained PCB layouts.

With a maximum power dissipation rating of 81 W, this MOSFET can handle significant thermal loads, ensuring durability and reliability in demanding industrial and automotive environments. The device’s very low on-resistance of 1.2 milliohms contributes to energy efficiency by minimizing conduction losses during operation.

The low typical gate charge of 80 nC facilitates fast switching speeds, ideal for power management and switching regulator designs. It is engineered to operate across a wide temperature range from -55°C to 175°C, meeting robust industrial and automotive standards including RoHS compliance and AEC-Q101 certification, which guarantees quality and safety for automotive use.

Additional features include a forward voltage of 730 mV and a maximum gate-source voltage of 20 V, enhancing the device's protection against voltage spikes and improving overall switching performance.

This MOSFET is suitable for various industrial, automotive, and high-performance electronic applications where efficiency, thermal management, and reliability are critical. This MOSFET features a maximum power dissipation of 81 W for efficient thermal management.

Low drain-source resistance of 1.2 milliohms ensures minimal conduction loss. Typical gate charge of 80 nC enables fast switching performance. Operates reliably between -55°C minimum and 175°C maximum temperatures. Compliant with RoHS and meets the automotive standard AEC-Q101.

Measures 3.3 mm in length with surface mount design for compact PCB integration. Forward voltage drop of 730 mV supports efficient power handling. Maximum gate-source voltage rating of 20 V protects against gate damage. Explore more power semiconductor solutions and electronic components on EnvMart for your industrial, automotive, and manufacturing needs.

Infineon IQE N-Channel MOSFET 253 A 30 V 8-Pin PQFN IQE006NE2LM5CGATMA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 253 A.

It has a maximum drain-source voltage rating of 30 V.

This MOSFET supports a maximum power dissipation of 81 W.

The typical gate charge is 80 nC, enabling fast switching performance.

It features a low drain-source resistance of 1.2 milliohms, which minimizes conduction loss.

This model operates reliably between -55°C and 175°C.

The forward voltage drop is 730 mV, supporting efficient power handling.

It has a maximum gate-source voltage rating of 20 V, which helps protect against gate damage.

This MOSFET is housed in an 8-pin PQFN package type.

Yes, it meets the automotive standard AEC-Q101 and is also RoHS compliant.

The length of this model is 3.3 mm, designed for compact PCB integration.

It features a surface mount design, suitable for space-constrained applications.

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