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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE006NE2LM5CGATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 730mV |
The Infineon IQE006NE2LM5CGATMA1 is an advanced N-Channel MOSFET designed for high-power electronic applications. It supports a maximum continuous drain current of 253 A and a drain-source voltage of 30 V, housed in a compact 8-pin PQFN surface mount package, making it suitable for space-constrained PCB layouts.
With a maximum power dissipation rating of 81 W, this MOSFET can handle significant thermal loads, ensuring durability and reliability in demanding industrial and automotive environments. The device’s very low on-resistance of 1.2 milliohms contributes to energy efficiency by minimizing conduction losses during operation.
The low typical gate charge of 80 nC facilitates fast switching speeds, ideal for power management and switching regulator designs. It is engineered to operate across a wide temperature range from -55°C to 175°C, meeting robust industrial and automotive standards including RoHS compliance and AEC-Q101 certification, which guarantees quality and safety for automotive use.
Additional features include a forward voltage of 730 mV and a maximum gate-source voltage of 20 V, enhancing the device's protection against voltage spikes and improving overall switching performance.
This MOSFET is suitable for various industrial, automotive, and high-performance electronic applications where efficiency, thermal management, and reliability are critical. This MOSFET features a maximum power dissipation of 81 W for efficient thermal management.
Low drain-source resistance of 1.2 milliohms ensures minimal conduction loss. Typical gate charge of 80 nC enables fast switching performance. Operates reliably between -55°C minimum and 175°C maximum temperatures. Compliant with RoHS and meets the automotive standard AEC-Q101.
Measures 3.3 mm in length with surface mount design for compact PCB integration. Forward voltage drop of 730 mV supports efficient power handling. Maximum gate-source voltage rating of 20 V protects against gate damage. Explore more power semiconductor solutions and electronic components on EnvMart for your industrial, automotive, and manufacturing needs.
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