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Infineon N-Channel Enhancement Mode MOSFET 120A 40V 8-Pin TDSON IAUC90N10S5N062ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC90N10S5N062ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features 0.7mΩ low on-resistance to minimize conduction losses.
- Supports 81W maximum power dissipation for elevated power handling.
- 80nC typical gate charge enables efficient and predictable switching.
- Operates within a temperature range of -55°C to 175°C.
- Complies with RoHS and automotive AEC-Q101 standards.
- Supplied in an 8-pin TDSON surface-mount package for compact assembly.
- Offers a maximum gate source voltage tolerance of 20V for flexible gate drive design.
- Ideal for automotive power management, high-current motor drives, and DC-DC conversion.
Product Description
Infineon IAUC90N10S5N062ATMA1 MOSFET is a high-performance N-Channel device operating in enhancement mode. It supports a continuous drain current of 120A and a maximum drain source voltage of 40V, making it suitable for demanding power switching applications. The device is housed in a compact 8-pin TDSON package designed for surface mounting that offers optimal control of board space and thermal dissipation.
With a low typical on-resistance of 0.7mΩ, this MOSFET reduces conduction losses and increases efficiency. It can handle power dissipation up to 81W, supporting elevated power requirements in industrial and automotive systems. The typical gate charge of 80nC ensures predictable and efficient switching energy consumption.
The device is rated to operate in a wide temperature range from -55°C up to 175°C, fulfilling the harsh thermal demands of automotive and industrial environments. It meets the stringent AEC-Q101 standard for automotive applications and complies with RoHS environmental restrictions, confirming its suitability for automotive power management modules, high-current motor drive stages, DC-DC conversion in industrial equipment, battery protection, and compact surface-mount power assemblies.
120A maximum continuous drain current. 40V maximum drain source voltage. 0.7mΩ typical drain source resistance. 81W maximum power dissipation. Operating temperature range of -55°C to 175°C. 8-pin TDSON surface mount package.
20V maximum gate source voltage. RoHS and AEC-Q101 compliant.
This Infineon IAUC MOSFET is engineered for reliable use in automotive, industrial, laboratory, and manufacturing applications where robust power switching and thermal performance are critical. It enables efficient control of high-current loads within compact electronic assemblies, contributing to energy efficiency and device longevity.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120A.
This MOSFET supports a maximum drain source voltage of 40V.
The typical on-resistance of this MOSFET is 0.7mΩ, which helps minimize conduction losses.
It has a maximum power dissipation rating of 81W, suitable for elevated power handling applications.
This MOSFET operates within a temperature range of -55°C to 175°C.
The typical gate charge for this model is 80nC, enabling efficient and predictable switching.
It is supplied in an 8-pin TDSON surface-mount package, which is designed for compact assembly.
This model complies with RoHS and the automotive AEC-Q101 standards.
The maximum gate source voltage tolerance is 20V, allowing for flexible gate drive design.
This MOSFET is suitable for automotive power management, high-current motor drives, and DC-DC conversion.
The channel type of this device is N-channel, operating in enhancement mode.
The country of origin for this MOSFET is India.
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