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Infineon N-Channel MOSFET SuperSO8 5 x 6 Package, 381 A Maximum Drain Current, 40 V Drain Source Voltage BSC0501NSIATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC0501NSIATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Optimized for high-performance buck converters and power density applications.
- Features very low on-resistance (0.7 mΩ) ensuring efficient operation.
- Includes a monolithic integrated Schottky-like diode for improved switching.
- Capable of withstanding maximum power dissipation of 81 watts.
- Operates reliably from -55°C to 175°C operating temperature range.
- Maximum gate-source voltage rating of ±20 V.
- Typical gate charge of 80 nC at gate-source voltage of 8 V enables fast switching.
- Surface mount package type suitable for compact PCB layouts.
Product Description
Infineon BSC0501NSIATMA1 is a N-Channel MOSFET designed for high power applications requiring low on-resistance, high current capability, and fast switching characteristics. Packaged in an 8-pin SuperSO8 5 x 6 surface mount form factor, this MOSFET supports a maximum continuous drain current of 381 A and operates at a drain-source voltage of up to 40 V.
This component is ideal for use in desktop and server power supplies, high power density voltage regulators, and other industrial power management systems where enhanced energy efficiency and power density are critical. The integrated Schottky-like diode reduces switching losses, while the device's low RDS(on) ensures minimal conduction losses, improving overall system performance.
It has a maximum power dissipation rating of 81 watts, with robust operation maintained between -55°C and 175°C, enabling deployment in harsh environments. The gate charge of 80 nC at 8 V gate-source voltage supports rapid switching, making it suitable for high-frequency applications.
The MOSFET is compliant with RoHS and halogen-free standards, reflecting commitment to environmentally responsible manufacturing. Its 100% avalanche testing guarantees reliability under fault conditions, making it a suitable choice for demanding industrial, electronic, and power management applications.
Applications include industrial power converters, HVAC controls, manufacturing automation, and other sectors requiring efficient power switching components. The set of images illustrate the product's SuperSO8 surface mount package and datasheet design resources available for integration and PCB design.
Choose this Infineon BSC0501NSIATMA1 MOSFET for applications demanding high current, low loss, and high reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A.
This N-Channel MOSFET can operate at a maximum drain-source voltage of 40 V.
It features a very low on-resistance of 0.7 mΩ, ensuring efficient operation.
The operating temperature range for this MOSFET is from -55°C to 175°C.
The typical gate charge at a gate-source voltage of 8 V is 80 nC.
This model has a maximum power dissipation rating of 81 watts.
The MOSFET is packaged in an 8-pin SuperSO8 5 x 6 surface mount form factor.
It is compliant with RoHS and halogen-free standards, reflecting environmentally responsible manufacturing.
It is suitable for applications such as industrial power converters, HVAC controls, and manufacturing automation.
The maximum gate-source voltage rating for this model is ±20 V.
The forward voltage of the integrated Schottky-like diode is 1 V.
This MOSFET has a pin count of 8.
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